Author

M. Jadan

4 articles in our journals

Articles where this person is an author, newest first. People are matched by their name as printed (no ORCID iD is recorded for them), not by name alone; search the name as text to find namesakes too.

Research ArticleOpen accessModel of High-Temperature Diffusion of Interstitial Silicon Atoms in SiliconM. Jadan, A. R. Chelyadinskii, V. Yu. YavidProblem statement: Correct description of the anomalous phenomena determined by self-point defects in implanted silicon desires knowledge of their properties. Interstitial Si atoms themselves display anomalies in their behavior and firstly in existence of two very different values of the diffusion coefficient. Approach: We analyzed experimental results and proposed the model of diffusion of interstitial Si atoms in silicon in … …American Journal of Applied Sciences, Vol. 6, Issue 6 · 30 Sep 2009 · 6,868 accessesView PDF Cite

Research ArticleOpen accessDisplacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and AnnealingM. Jadan, A. R. Chelyadinskii, V. Y. YavidThe process of boron displacement from the nodes into interstitial positions of interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with the help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing … …American Journal of Applied Sciences, Vol. 2, Issue 5 · 31 May 2005 · 6,985 accessesView PDF Cite

Research ArticleOpen accessResidual Defects in Silicon Implanted with Boron and Phosphorous IonsM. JadanAccumulation of radiation defects in Si implanted with B+ or P+ ions, and formation of the residual extended defects (dislocation loops, rod-like defects) in the process of successive thermal treatment have been studied. The anomalies observed in the formation of the extended defects are associated with the elastic stresses in the damaged regions affecting the process of radiation defects clustering. …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 6,935 accessesView PDF Cite

Research ArticleOpen accessLocalization of Implanted Impurities in SiliconM. Jadan, Jihad S.M. AddasiLocalization of implanted boron impurities at the nodes and interstitial of silicon depending on the implantation current density has been studied by the X-ray diffraction and astrophysical methods. A shares of the impurity at the lattice sites increases with growing current density due to the instantaneous vacancy concentration and suppression of the impurity displacement from the sites by silicon interstitial. …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 6,714 accessesView PDF Cite