Displacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and Annealing
M. Jadan1, A. R. Chelyadinskii2 & V. Y. Yavid2 Show affiliations
- Tafila Applied University College, AL-Balqa, Applied University, Jordan
- Belarusian State University, Minsk, Belarus
American Journal of Applied Sciences, Volume 2, Issue 5, pp. 910–913 · doi.org/10.3844/ajassp.2005.910.913
Abstract
The process of boron displacement from the nodes into interstitial positions of interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with the help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing of the ionization level in the implanted layer during implantation or annealing (additional low-energy electron irradiation) the replacement process may be suppressed
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Jadan, M., Chelyadinskii, A. R. & Yavid, V. Y. (2005). Displacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and Annealing. American Journal of Applied Sciences, 2(5), 910–913. https://doi.org/10.3844/ajassp.2005.910.913
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