Residual Defects in Silicon Implanted with Boron and Phosphorous Ions

Accumulation of radiation defects in Si implanted with B⁺ or P⁺ ions, and formation of the residual extended defects (dislocation loops, rod-like defects) in the process of successive thermal treatment have been studied. The anomalies observed in the formation of the extended defects are associated with the elastic stresses in the damaged regions affecting the process of radiation defects clustering.