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Author

V. Yu. Yavid

1 article in our journals

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Research ArticleOpen accessModel of High-Temperature Diffusion of Interstitial Silicon Atoms in SiliconM. Jadan, A. R. Chelyadinskii, V. Yu. YavidProblem statement: Correct description of the anomalous phenomena determined by self-point defects in implanted silicon desires knowledge of their properties. Interstitial Si atoms themselves display anomalies in their behavior and firstly in existence of two very different values of the diffusion coefficient. Approach: We analyzed experimental results and proposed the model of diffusion of interstitial Si atoms in silicon in … …American Journal of Applied Sciences, Vol. 6, Issue 6 · 30 Sep 2009 · 6,868 accessesView PDFCite