Localization of Implanted Impurities in Silicon

Localization of implanted boron impurities at the nodes and interstitial of silicon depending on the implantation current density has been studied by the X-ray diffraction and astrophysical methods. A shares of the impurity at the lattice sites increases with growing current density due to the instantaneous vacancy concentration and suppression of the impurity displacement from the sites by silicon interstitial.