Author

A. R. Chelyadinskii

2 articles in our journals

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Research ArticleOpen accessModel of High-Temperature Diffusion of Interstitial Silicon Atoms in SiliconM. Jadan, A. R. Chelyadinskii, V. Yu. YavidProblem statement: Correct description of the anomalous phenomena determined by self-point defects in implanted silicon desires knowledge of their properties. Interstitial Si atoms themselves display anomalies in their behavior and firstly in existence of two very different values of the diffusion coefficient. Approach: We analyzed experimental results and proposed the model of diffusion of interstitial Si atoms in silicon in … …American Journal of Applied Sciences, Vol. 6, Issue 6 · 30 Sep 2009 · 6,862 accessesView PDF Cite

Research ArticleOpen accessDisplacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and AnnealingM. Jadan, A. R. Chelyadinskii, V. Y. YavidThe process of boron displacement from the nodes into interstitial positions of interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with the help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing … …American Journal of Applied Sciences, Vol. 2, Issue 5 · 31 May 2005 · 6,983 accessesView PDF Cite