7 results for “R. Chtourou”

Research ArticleOpen accessIn the author namesDesign and Optimization of a 1.55 µm Waveguide Based on Silicon Planar Photonic CrystalsR. Bchir, A. Bardaoui, M. Machhout et al.Background: Silicon based Planar Photonic Crystals (PPC) are used for the design of a 1.55 µm waveguide. Line defects are then formed in the PPC structures, by removing rows of holes, to obtain a Planar Photonic Crystal Waveguide (PPCW). Objective: First, we varied the thickness of the Silicon slab and the pore radius in order to obtain optimum design parameters … …American Journal of Applied Sciences, Vol. 7, Issue 1 · 31 Jan 2010 · 7,476 accessesView PDF Cite

Research ArticleOpen accessIn the author namesAtomic Layer Epitaxial Growth of Gaas on Porous Silicon SubstrateMohamed Lajnef, Afrah Bardaoui, Isabelle Sagne et al.GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to … …American Journal of Applied Sciences, Vol. 5, Issue 5 · 31 May 2008 · 7,029 accessesView PDF Cite

Research ArticleOpen accessIn the author namesElectronic Energies in Delta Doped AlGaAs/GaAs HeterostucturesA. Meftah, H. Ajlani, A. Marzouki et al.The band bending of the potential at the AlGaAs/GaAs interface increases with the electrons concentration in the GaAs channel. This band bending is often ignored in the theoretical calculation of the electronic energies and a linear potential approximation was used. This led to imprecise energy values and occupied subband configurations. We have taken account of the band bending in the … …American Journal of Applied Sciences, Vol. 5, Issue 4 · 30 Apr 2008 · 6,932 accessesView PDF Cite

Research ArticleOpen accessIn the author namesDeep Defects Annihilation in GaAs1-xNx Layers by Si-dopingN. Ben Sedrine, A. Hamdouni, J. Rihani et al.The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which … …American Journal of Applied Sciences, Vol. 4, Issue 1 · 30 Apr 2007 · 8,163 accessesView PDF Cite

Research ArticleOpen accessIn the author namesPhotocurrent and Photoluminescence Investigations of GaInNAs and GaInNAs(Sb) Quantum Wells Grown by Molecular Beam EpitaxyS. Ben Bouzid, F. Bousbih, A Hamdouni et al.We have investigated photocurrent (PC) and photoluminescence (PL) in sequentially grown GaInNAs/GaAs and GaInNAs(Sb)/GaAsSbN quantum wells. Photocurrent transitions are analyzed by theoretical calculations using envelope function formalism taking into account the strain effect and the strong coupling between nitrogen localized state and the GaInAs band gap. The results are consistent with a type I band alignment and a conduction band … …American Journal of Applied Sciences, Vol. 2, Issue 9 · 30 Sep 2005 · 6,477 accessesView PDF Cite