Author

F. Bousbih

2 articles in our journals

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Research ArticleOpen accessDeep Defects Annihilation in GaAs1-xNx Layers by Si-dopingN. Ben Sedrine, A. Hamdouni, J. Rihani et al.The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which … …American Journal of Applied Sciences, Vol. 4, Issue 1 · 30 Apr 2007 · 8,160 accessesView PDF Cite

Research ArticleOpen accessPhotocurrent and Photoluminescence Investigations of GaInNAs and GaInNAs(Sb) Quantum Wells Grown by Molecular Beam EpitaxyS. Ben Bouzid, F. Bousbih, A Hamdouni et al.We have investigated photocurrent (PC) and photoluminescence (PL) in sequentially grown GaInNAs/GaAs and GaInNAs(Sb)/GaAsSbN quantum wells. Photocurrent transitions are analyzed by theoretical calculations using envelope function formalism taking into account the strain effect and the strong coupling between nitrogen localized state and the GaInAs band gap. The results are consistent with a type I band alignment and a conduction band … …American Journal of Applied Sciences, Vol. 2, Issue 9 · 30 Sep 2005 · 6,475 accessesView PDF Cite