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Author

H. Ajlani

1 article in our journals

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Research ArticleOpen accessElectronic Energies in Delta Doped AlGaAs/GaAs HeterostucturesA. Meftah, H. Ajlani, A. Marzouki et al.The band bending of the potential at the AlGaAs/GaAs interface increases with the electrons concentration in the GaAs channel. This band bending is often ignored in the theoretical calculation of the electronic energies and a linear potential approximation was used. This led to imprecise energy values and occupied subband configurations. We have taken account of the band bending in the … …American Journal of Applied Sciences, Vol. 5, Issue 4 · 30 Apr 2008 · 6,931 accessesView PDFCite