Author

R. Chtourou

Laboratory of Photovoltaic, Semiconductors and Nanostructures, Energy Center (CRTEn), Route Tourisitique Soliman, BP 95 Hammam-Lif 2050, Tunisia

4 articles in our journals

Articles where this person is an author, newest first. People are matched by their name as printed (no ORCID iD is recorded for them), not by name alone; search the name as text to find namesakes too.

Research ArticleOpen accessDesign and Optimization of a 1.55 µm Waveguide Based on Silicon Planar Photonic CrystalsR. Bchir, A. Bardaoui, M. Machhout et al.Background: Silicon based Planar Photonic Crystals (PPC) are used for the design of a 1.55 µm waveguide. Line defects are then formed in the PPC structures, by removing rows of holes, to obtain a Planar Photonic Crystal Waveguide (PPCW). Objective: First, we varied the thickness of the Silicon slab and the pore radius in order to obtain optimum design parameters … …American Journal of Applied Sciences, Vol. 7, Issue 1 · 31 Jan 2010 · 7,472 accessesView PDF Cite

Research ArticleOpen accessElectronic Energies in Delta Doped AlGaAs/GaAs HeterostucturesA. Meftah, H. Ajlani, A. Marzouki et al.The band bending of the potential at the AlGaAs/GaAs interface increases with the electrons concentration in the GaAs channel. This band bending is often ignored in the theoretical calculation of the electronic energies and a linear potential approximation was used. This led to imprecise energy values and occupied subband configurations. We have taken account of the band bending in the … …American Journal of Applied Sciences, Vol. 5, Issue 4 · 30 Apr 2008 · 6,931 accessesView PDF Cite

Research ArticleOpen accessDeep Defects Annihilation in GaAs1-xNx Layers by Si-dopingN. Ben Sedrine, A. Hamdouni, J. Rihani et al.The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which … …American Journal of Applied Sciences, Vol. 4, Issue 1 · 30 Apr 2007 · 8,160 accessesView PDF Cite

Research ArticleOpen accessPhotocurrent and Photoluminescence Investigations of GaInNAs and GaInNAs(Sb) Quantum Wells Grown by Molecular Beam EpitaxyS. Ben Bouzid, F. Bousbih, A Hamdouni et al.We have investigated photocurrent (PC) and photoluminescence (PL) in sequentially grown GaInNAs/GaAs and GaInNAs(Sb)/GaAsSbN quantum wells. Photocurrent transitions are analyzed by theoretical calculations using envelope function formalism taking into account the strain effect and the strong coupling between nitrogen localized state and the GaInAs band gap. The results are consistent with a type I band alignment and a conduction band … …American Journal of Applied Sciences, Vol. 2, Issue 9 · 30 Sep 2005 · 6,475 accessesView PDF Cite