Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping
N. Ben Sedrine, A. Hamdouni, J. Rihani, S. Ben Bouzid, F. Bousbih, J.C. Harmand & R. Chtourou
American Journal of Applied Sciences, Volume 4, Issue 1, pp. 19–22 · doi.org/10.3844/ajassp.2007.19.22
Abstract
The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which intensity decreases by increasing silicon content. This wide band was attributed to the presence of deep localized states induced by a three-dimensional growth of the GaAsN layer. In addition, these deep localized states are annihilated by the free carriers from silicon atoms. PL measurements in the range of 10 to 300 K were also performed to identify the band gap energy of GaAs1-xNx structure. The decrease of the activation energies with increasing silicon content was observed.
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Ben Sedrine, N., Hamdouni, A., Rihani, J., Ben Bouzid, S., Bousbih, F., Harmand, J. & Chtourou, R. (2007). Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping. American Journal of Applied Sciences, 4(1), 19–22. https://doi.org/10.3844/ajassp.2007.19.22
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