Research ArticleOpen accessIn the author namesModel of High-Temperature Diffusion of Interstitial Silicon Atoms in SiliconM. Jadan, A. R. Chelyadinskii, V. Yu. YavidProblem statement: Correct description of the anomalous phenomena determined by self-point defects in implanted silicon desires knowledge of their properties. Interstitial Si atoms themselves display anomalies in their behavior and firstly in existence of two very different values of the diffusion coefficient. Approach: We analyzed experimental results and proposed the model of diffusion of interstitial Si atoms in silicon in … …American Journal of Applied Sciences, Vol. 6, Issue 6 · 30 Sep 2009 · 6,862 accessesView PDFCite
Research ArticleOpen accessIn the author namesDisplacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and AnnealingM. Jadan, A. R. Chelyadinskii, V. Y. YavidThe process of boron displacement from the nodes into interstitial positions of interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with the help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing … …American Journal of Applied Sciences, Vol. 2, Issue 5 · 31 May 2005 · 6,983 accessesView PDFCite
Research ArticleOpen accessIn the author namesResidual Defects in Silicon Implanted with Boron and Phosphorous IonsM. JadanAccumulation of radiation defects in Si implanted with B+ or P+ ions, and formation of the residual extended defects (dislocation loops, rod-like defects) in the process of successive thermal treatment have been studied. The anomalies observed in the formation of the extended defects are associated with the elastic stresses in the damaged regions affecting the process of radiation defects clustering. …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 6,931 accessesView PDFCite
Research ArticleOpen accessIn the author namesLocalization of Implanted Impurities in SiliconM. Jadan, Jihad S.M. AddasiLocalization of implanted boron impurities at the nodes and interstitial of silicon depending on the implantation current density has been studied by the X-ray diffraction and astrophysical methods. A shares of the impurity at the lattice sites increases with growing current density due to the instantaneous vacancy concentration and suppression of the impurity displacement from the sites by silicon interstitial. …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 6,712 accessesView PDFCite
Research ArticleOpen accessIn the author namesControl of Oxygen Concentration by Using a Carbonaceous SubstanceMohanad Jadan, Jihad Said AddasiThe control of oxygen concentration in gas flow may be used in chemical industry, heat power engineering, ecology, automobile construction and other industrial branches. This control is realized over a broad range of oxygen concentrations. The control of the oxygen concentration is based on passing of gas flow through a measuring cavity of radio spectrometer and measurement of a magnetic … …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 6,908 accessesView PDFCite