Sign inSubmit
Tips: “quotes” for a phrase · author:Lee · a DOI goes straight to its article

31 articles for “Thin Films”
Set a search alert
Research ArticleOpen accessPhrase in the titleThermo Optical Properties and Related Electronic Polarizabilities of MoO3 Thin Films Using EllipsometryZahid HussainThermo optical properties are reported for thermally evaporated MoO3 thin films using ellipsometry. The values of TOCs: dn/dT and dk/dT relating to MoO3 thin films are found to be negative and positive, respectively over the temperature range 295-460 K and also are found to have the same trend over the range 120-300 K, and have values of the order of … …American Journal of Engineering and Applied Sciences, Vol. 12, Issue 1 · 1 Apr 2019 · 7,571 accessesView PDFCite
Research NotesOpen accessPhrase in the titleA Study on Fabrication and Structural Characterization of PbS Thin FilmsMustika Wati, Kamsul AbrahaPbS thin films are fabricated from 99.9% PbS powder on glass substrates using the vacuum evaporation method. Some of the samples are then treated in an advanced process called annealing. Samples are annealed in temperatures of 80, 100, 120 and 150°C for two h. Characterization using an X-Ray Diffractometer (XRD) resulted in values of lattice constant of the films ranging … …American Journal of Biochemistry and Biotechnology, Vol. 13, Issue 4 · 20 Nov 2017 · 7,847 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleProperties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical PropertiesPutut Marwoto, Edy Wibowo, Dwi Suprayogi et al.ZnO:Ga thin films were deposited on corning glass by dc magnetron sputtering. Influence of Ga-doped concentrations on the structural and optical properties of ZnO:Ga thin films were investigated. The XRD patterns show that the crystallinity of deposited films improved with the increase of Ga concentrations from 1 to 2%, then decrease at 3% Ga concentrations. The optical transmittance of films … …American Journal of Applied Sciences, Vol. 13, Issue 12 · 14 Dec 2016 · 7,477 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleInfluence of Triethanolamine on the Chemical Bath Deposited NiS Thin FilmsAnuar Kassim, Ho Soon Min, Tan Wee Tee, Ngai Chee FeiProblem statement: Recently, many scientists looking for new chalcogenide materials for the solar cell applications. Nowadays, silicon-based solar cell became dominant products in the market. Because of expensive silicon-based solar cells, scientists hope replaces it with cheaper chalcogenide materials. Approach: The binary chalcogenide materials were deposited onto microscope glass slide using simple chemical bath deposition method. Here, we study the … …American Journal of Applied Sciences, Vol. 8, Issue 4 · 18 Apr 2011 · 7,970 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleEffect of Film thickness on the Electrical and Structural Properties of CdS: In Thin FilmsShadia J. Ikhmayies, Riyad N. Ahmad-BitarPolycrystalline CdS:In thin films were prepared by the Spray Pyrolysis (SP) technique on glass substrates at a substrate temperature Ts= 490°C. The effect of film thickness on the electrical and structural properties of the films was investigated through the analysis of the I-V plots, x-ray diffraction spectra (XRD) and the scanning electron microscope (SEM) images. The conductivity of the films … …American Journal of Applied Sciences, Vol. 5, Issue 9 · 30 Sep 2008 · 6,910 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleEffect of Processing on the Electrical Properties of Spray-Deposited SnO2:F Thin FilmsShadia J. Ikhmayies, Riyad N. Ahmad-BitarHighly transparent SnO2:F thin films were produced by the Spray Pyrolysis (SP) technique to be used as forcontacts in the home made CdS/CdTe solar cells. Films of thickness 100-200 nm were prepared at substrate temperatures in the range 380-480°C. To improve the electrical properties of the films, annealing in nitrogen atmosphere at 400°C and etching by HNO3 were tried. The … …American Journal of Applied Sciences, Vol. 5, Issue 6 · 30 Jun 2008 · 7,002 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleXPS Studies of the SiO2 Substrates and Thermoelectric Thin Films of Sn/Sn+SnO2 under the Effects of the Different Thermal TreatmentsRichard Lagle, Stephen Egarievwe, Satilmis Budak, Mebougna DraboMultilayered thermoelectric Sn/Sn+SnO2 thin films were prepared using KJL DC/RF magnetron sputtering system under Ar gas plasma on the SiO2 substrates. The thicknesses of the fabricated thin films were found using Filmetrics UV thickness measurement system. The fabricated thin films were annealed at different temperatures for one hour to tailor the thermoelectric properties. In this study, unannealed, annealed at 150 … …American Journal of Engineering and Applied Sciences, Vol. 14, Issue 1 · 9 Jan 2021 · 8,209 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleThermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin FilmsSatilmis Budak, Zhigang Xiao, Shujun YangThe multilayer thermoelectric devices including Ni/200 layers of Si/Si + Sb/200 layers of Si/Si + Ge/Ni thin films were fabricated using electron beam and DC/RF magnetron sputtering deposition systems. The thickness measurements have been performed using Filmetrics UV thickness measurement system. The Au contacts at the bottom and top of the fabricated thermoelectric devices were measured as 100 nm for … …American Journal of Engineering and Applied Sciences, Vol. 13, Issue 4 · 14 Nov 2020 · 6,710 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleThermoelectric and Optical Properties of Advanced Thermoelectric Devices from Different Multilayer Thin FilmsMebougna Drabo, Satilmis BudakThermoelectric devices were prepared using different multilayered thin film structures in the order of Ge/Si+Ge, Si+Ge, Si, Sb+Ge, Ge and SiO2/SiO2+Ge by DC/RF Magnetron Sputtering. The thickness of the deposited thin films were measured using Filmetrics UV thickness measurement system. The prepared thermoelectric devices have been modified with 5 MeV Si ions bombardments at the different fluences (doses) using Pelletron … …American Journal of Applied Sciences, Vol. 16, Issue 8 · 29 Aug 2019 · 8,113 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleHighly-Efficient Advanced Thermoelectric Devices from Different Multilayer Thin FilmsSatilmis Budak, Zhigang Xiao, Barry Johnson et al.The efficiency of the thermoelectric materials and devices is shown by the dimensionless Figure of merit, ZT. ZT is calculated by multiplying the Seebeck coefficient with square of the electrical conductivity and absolute temperature and dividing it all by the thermal conductivity. Thermoelectric devices were prepared using different multilayered thin film structures in the order of SiO2/SiO2 + Ge/Ge/Sb + … …American Journal of Engineering and Applied Sciences, Vol. 9, Issue 2 · 27 Apr 2016 · 8,368 accessesView PDFCite