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Research Article · Open access · Published 14 December 2016

Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties

Putut Marwoto1, Edy Wibowo2, Dwi Suprayogi1, Sulhadi Sulhadi1, Didik Aryanto3 & Sugianto Sugianto1

American Journal of Applied Sciences, Volume 13, Issue 12, pp. 1394–1399 · doi.org/10.3844/ajassp.2016.1394.1399

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Abstract

ZnO:Ga thin films were deposited on corning glass by dc magnetron sputtering. Influence of Ga-doped concentrations on the structural and optical properties of ZnO:Ga thin films were investigated. The XRD patterns show that the crystallinity of deposited films improved with the increase of Ga concentrations from 1 to 2%, then decrease at 3% Ga concentrations. The optical transmittance of films with 1% and 2% Ga concentration reach 85% in the visible range, while at 3% Ga concentration the transmittance of film only 70%. We observed that the band gap of film change due to the addition of Ga dopant. The band gap of the films are 3.27, 3.28 and 3.21 eV for 1, 2 and 3% Ga-doped concentrations, respectively.

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Marwoto, P., Wibowo, E., Suprayogi, D., Sulhadi, S., Aryanto, D. & Sugianto, S. (2016). Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties. American Journal of Applied Sciences, 13(12), 1394–1399. https://doi.org/10.3844/ajassp.2016.1394.1399

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Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical PropertiesAmerican Journal of Applied Sciences · Volume 13, Issue 12 · pp. 1394–1399 · CC BY 3.0Download