Author

Mebougna Drabo

Alabama A&M University, Normal, United States

3 articles in our journals

Articles where this person is an author, newest first. People are matched by their name as printed (no ORCID iD is recorded for them), not by name alone; search the name as text to find namesakes too.

Research ArticleOpen accessXPS Studies of the SiO2 Substrates and Thermoelectric Thin Films of Sn/Sn+SnO2 under the Effects of the Different Thermal TreatmentsRichard Lagle, Stephen Egarievwe, Satilmis Budak, Mebougna DraboMultilayered thermoelectric Sn/Sn+SnO2 thin films were prepared using KJL DC/RF magnetron sputtering system under Ar gas plasma on the SiO2 substrates. The thicknesses of the fabricated thin films were found using Filmetrics UV thickness measurement system. The fabricated thin films were annealed at different temperatures for one hour to tailor the thermoelectric properties. In this study, unannealed, annealed at 150 … …American Journal of Engineering and Applied Sciences, Vol. 14, Issue 1 · 9 Jan 2021 · 8,209 accessesView PDF Cite

Research ArticleOpen accessThermoelectric and Optical Properties of Advanced Thermoelectric Devices from Different Multilayer Thin FilmsMebougna Drabo, Satilmis BudakThermoelectric devices were prepared using different multilayered thin film structures in the order of Ge/Si+Ge, Si+Ge, Si, Sb+Ge, Ge and SiO2/SiO2+Ge by DC/RF Magnetron Sputtering. The thickness of the deposited thin films were measured using Filmetrics UV thickness measurement system. The prepared thermoelectric devices have been modified with 5 MeV Si ions bombardments at the different fluences (doses) using Pelletron … …American Journal of Applied Sciences, Vol. 16, Issue 8 · 29 Aug 2019 · 8,113 accessesView PDF Cite

Research ArticleOpen accessHighly-Efficient Advanced Thermoelectric Devices from Different Multilayer Thin FilmsSatilmis Budak, Zhigang Xiao, Barry Johnson et al.The efficiency of the thermoelectric materials and devices is shown by the dimensionless Figure of merit, ZT. ZT is calculated by multiplying the Seebeck coefficient with square of the electrical conductivity and absolute temperature and dividing it all by the thermal conductivity. Thermoelectric devices were prepared using different multilayered thin film structures in the order of SiO2/SiO2 + Ge/Ge/Sb + … …American Journal of Engineering and Applied Sciences, Vol. 9, Issue 2 · 27 Apr 2016 · 8,368 accessesView PDF Cite