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10 articles for “GaAs”
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Research ArticleOpen accessEvery word in the titleThe Effect of Electrical Properties by Texturing Surface on GaAs Solar Cell EfficiencyH. Abdullah, A. Lennie, M. J. Saifuddin, I. AhmadProblem statement: This project discusses on the method to resolve the optical losses problem that have been hindering the totality efficiency of the photovoltaic. Solar cell simulation could be useful for time saving and cost consumption. The Silvaco software is not widely used in designing the 2D solar cell devices because there is lots of 1D, 2D and 3D-simulation beside … …American Journal of Engineering and Applied Sciences, Vol. 2, Issue 1 · 31 Mar 2009 · 8,785 accessesView PDFCite
Research ArticleOpen accessEvery word in the titleAtomic Layer Epitaxial Growth of Gaas on Porous Silicon SubstrateMohamed Lajnef, Afrah Bardaoui, Isabelle Sagne et al.GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to … …American Journal of Applied Sciences, Vol. 5, Issue 5 · 31 May 2008 · 7,027 accessesView PDFCite
Research ArticleOpen accessEvery word in the titleElectronic Energies in Delta Doped AlGaAs/GaAs HeterostucturesA. Meftah, H. Ajlani, A. Marzouki et al.The band bending of the potential at the AlGaAs/GaAs interface increases with the electrons concentration in the GaAs channel. This band bending is often ignored in the theoretical calculation of the electronic energies and a linear potential approximation was used. This led to imprecise energy values and occupied subband configurations. We have taken account of the band bending in the … …American Journal of Applied Sciences, Vol. 5, Issue 4 · 30 Apr 2008 · 6,931 accessesView PDFCite
Research ArticleOpen accessEvery word in the titleDeep Defects Annihilation in GaAs1-xNx Layers by Si-dopingN. Ben Sedrine, A. Hamdouni, J. Rihani et al.The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which … …American Journal of Applied Sciences, Vol. 4, Issue 1 · 30 Apr 2007 · 8,160 accessesView PDFCite
Research ArticleOpen accessEvery word in the titleDetermination of Absorption Coefficients and Thermal Diffusivity of Modulated Doped GaAlAs/GaAs Heterostructure by Photothermal Deflection SpectroscopyS. Aloulou, M. Fathallah, M. Oueslati, A. SfaxiWe report in this study theoretical and experimental studies of photothermal deflection spectroscopy (PDS) for planar doped heterostructures AlGaAs/GaAs. The PDS spectra at T=300K are recorded by varying the wavelength of the excited radiation for different modulation frequencies. They show two different regions related to the fundamental electronic transitions from GaAs and Si doped AlGaAs. The DX levels have been … …American Journal of Applied Sciences, Vol. 2, Issue 10 · 31 Oct 2005 · 7,262 accessesView PDFCite
Research ArticleOpen accessEvery word in the titleDESIGN OF HIGH-SPEED PARALLEL IN PARALLEL OUT SHIFT REGISTER USING ALGAAS/GAAS MODFET TECHNOLOGYV. Ganesan, K. S. ShajiThis study enumerates the efficient design and analysis of Parallel In Parallel Out (PIPO) shift register using AlGaAs/GaAs MODFET D Flip-flop. The transient and power analysis are obtained with operating voltage at 1.3 V for the D flip-flop and PIPO shift register using pspice tool. There are many issues facing while integrating many number of transistors like delay, power dissipation, … …American Journal of Applied Sciences, Vol. 11, Issue 8 · 8 May 2014 · 7,146 accessesView PDFCite
Research ArticleOpen accessEvery word in the titleOptimal Dark Current Reduction in Quantum Well 9 µm GaAs/AlGaAs Infrared Photodetectors with Improved DetectivityShahram Mohammad Nejad, Saeed Olyaee, Maryam PourmahyabadiIn this research, an optimization approach is presented to decrease the dark current in GaAs/AlGaAs QWIPs. The dark current noise is reduced by increasing Al density in barriers, decreasing detector dimensions and increasing the periodic length of the structure. In addition, increasing the number of periods can reduce both the dark current and responsivity. Therefore, devices can be optimally designed … …American Journal of Applied Sciences, Vol. 5, Issue 8 · 31 Aug 2008 · 7,188 accessesView PDFCite
Research ArticleOpen accessIn the keywordsInfluence of a Low-Level Semiconductor Gallium Arsenate Laser in Experimental Envenomation Induced by Bothrops atrox Snake VenomElziliam Aranha De Sousa, José Adolfo Homobono Machado Bittencourt, Nayana Keyla Seabra De Oliveira et al.Bothrops atrox is responsible for the majority of snakebite accidents in Brazilian Amazon and its venom can cause prominent local tissue damage. Experimental groups consisted of five male mice, each administered either B. atrox Venom (VB), B. atrox Venom + Antivenom (VAV), B. atrox Venom + Laser (VL), B. atrox Venom + Antivenom + Laser (VAVL), or Sterile Saline Solution … …American Journal of Pharmacology and Toxicology, Vol. 7, Issue 4 · 29 Dec 2012 · 7,500 accessesView PDFCite
Research ArticleOpen accessIn the abstractMicroelectrical Mechanical Systems Switch for Designing Multi-Band AntennaA.H.M. Zahirul Alam, Md. Rafiqul Islam, Sheroz Khan, Muhammad Mahbubur RashidProblem statement: In this study Microelectrical Mechanical System (MEMS) switches were proposed to design a reconfigurable/multi-band antenna to replaced PIN diode switches or semiconductor switches due to lower insertion losses, good isolation, much lower intermodulation distortion, and lower power consumption. The antenna is able to operate at very high frequencies. Approach: A reconfigurable antenna that is capable to operate at … …Journal of Computer Science, Vol. 5, Issue 7 · 31 Jul 2009 · 6,687 accessesView PDFCite
Research ArticleOpen accessIn the abstractPhotocurrent and Photoluminescence Investigations of GaInNAs and GaInNAs(Sb) Quantum Wells Grown by Molecular Beam EpitaxyS. Ben Bouzid, F. Bousbih, A Hamdouni et al.We have investigated photocurrent (PC) and photoluminescence (PL) in sequentially grown GaInNAs/GaAs and GaInNAs(Sb)/GaAsSbN quantum wells. Photocurrent transitions are analyzed by theoretical calculations using envelope function formalism taking into account the strain effect and the strong coupling between nitrogen localized state and the GaInAs band gap. The results are consistent with a type I band alignment and a conduction band … …American Journal of Applied Sciences, Vol. 2, Issue 9 · 30 Sep 2005 · 6,475 accessesView PDFCite