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48 results for “Semiconductor”

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Research ArticleOpen accessIn the abstractDesign of a Current Sensor for IDDQ Testing of CMOS ICMohd Liakot Ali, Nurul Huda KhamisThis study presents the design of an off-chip current sensor for IDDQ testing of CMOS (Complementary Metal-oxide Semiconductor) ICs (integrated circuit). It provides a linear voltage signal of IDDQ current with a conversion factor of 5 mV/μA without any amplification. A voltage-controlled switch is used to bypass the transient current peaks. It has also been shown that the sensor is … …American Journal of Applied Sciences, Vol. 2, Issue 3 · 31 Mar 2005 · 6,834 accessesView PDFCite
Research ArticleOpen accessIn the abstractRecent Progress in Self-Cleaning Materials with Different Suitable ApplicationsSiavash Hosseinpour Chermahini, Kaveh Ostad-Ali-Askari, Saeid Eslamian, Vijay P. SinghSelf-cleaning properties have received significant attention for the importance of their potential. Coatings at Nano-scales offer possibilities of using materials for self-cleaning surfaces. Recent efforts have begun to focus on the kinds of materials including metals, semiconductors and polymers. Such materials can have enormous potential in only a few applications. Moreover, the production of these materials requires high costs with … …American Journal of Engineering and Applied Sciences, Vol. 11, Issue 2 · 25 Apr 2018 · 9,132 accessesView PDFCite
Research ArticleOpen accessIn the abstractOptical and Structure Analysis of ZnO:Al FilmNeilo Marcos Trindade, Michel Chaves, José Roberto Ribeiro Bortoleto et al.ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 4 · 5 Oct 2017 · 7,855 accessesView PDFCite
Research ArticleOpen accessIn the abstractSTUDY OF THE POSSIBILITY OF POLYTYPE 3C SILICON CARBIDE BULK CRYSTALS GROWING FOR USE IN POWER DEVICESLebedev Alexander Alexandrovich, Bulat Pavel ViktorovichDue to its electro-physical parameters, the silicon carbide is a promising material for power devices, including the microwave range. In recent years there has been considerable progress in the development of power devices, based on SiC. Serious problem, which hinders the widespread commercialization of SiC bipolar power devices, is the p-n structures degradation during high densities of passing forward current. … …American Journal of Applied Sciences, Vol. 11, Issue 10 · 5 Dec 2014 · 6,348 accessesView PDFCite