Design of a Current Sensor for IDDQ Testing of CMOS IC
Mohd Liakot Ali1 & Nurul Huda Khamis1 Show affiliations
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Malaysia
American Journal of Applied Sciences, Volume 2, Issue 3, pp. 682–687 · doi.org/10.3844/ajassp.2005.682.687
Abstract
This study presents the design of an off-chip current sensor for IDDQ testing of CMOS (Complementary Metal-oxide Semiconductor) ICs (integrated circuit). It provides a linear voltage signal of IDDQ current with a conversion factor of 5 mV/μA without any amplification. A voltage-controlled switch is used to bypass the transient current peaks. It has also been shown that the sensor is capable of detecting IDDQ faults of a circuit at 100 kHz test frequency without degrading its performance.
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Ali, M. L. & Khamis, N. H. (2005). Design of a Current Sensor for IDDQ Testing of CMOS IC. American Journal of Applied Sciences, 2(3), 682–687. https://doi.org/10.3844/ajassp.2005.682.687
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