Author

Lebedev Alexander Alexandrovich

National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia

2 articles in our journals

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Research ArticleOpen accessAcquisition and Research of the p-3C-SiC Epitaxial Layers Based on the 6H-SiC Semi-Insulating SubstratesLebedev Alexander Alexandrovich, S.P. Lebedev, E.V. Bogdanova et al.By now we know almost nothing about works on production of p-3C-SiC. Probably, it is due to the fact that the basic acceptor impurity (aluminium) accumulates on the interfaces of the twins and other structural defects in the 3C film and it is electrically neutral. We managed to produce the highly doped layers p-3C based on the conducting substrates of … …American Journal of Applied Sciences, Vol. 12, Issue 3 · 27 May 2015 · 6,466 accessesView PDF Cite

Research ArticleOpen accessSTUDY OF THE POSSIBILITY OF POLYTYPE 3C SILICON CARBIDE BULK CRYSTALS GROWING FOR USE IN POWER DEVICESLebedev Alexander Alexandrovich, Bulat Pavel ViktorovichDue to its electro-physical parameters, the silicon carbide is a promising material for power devices, including the microwave range. In recent years there has been considerable progress in the development of power devices, based on SiC. Serious problem, which hinders the widespread commercialization of SiC bipolar power devices, is the p-n structures degradation during high densities of passing forward current. … …American Journal of Applied Sciences, Vol. 11, Issue 10 · 5 Dec 2014 · 6,348 accessesView PDF Cite