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27 results for “Band-Gap”
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Research ArticleOpen accessIn the abstractInfluence of Annealing Temperature on Characteristics of Bismuth Doped Zinc Oxide FilmsSirirat Tubsungnoen Rattanachan, Phanuwat Krongarrom, Thipwan FangsuwannarakIn this study, Bismuth (Bi) doped ZnO thin films were deposited on quartz substrates by a sol-gel spin coating method and annealed at different annealing temperatures of 200, 300, 400, 500, 600 and 700°C, respectively. Structural and optical properties of nanocrystalline Bi-doped ZnO film on quartz were investigated by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and UV-VIS spectrophotometer. … …American Journal of Applied Sciences, Vol. 10, Issue 11 · 1 Oct 2013 · 7,126 accessesView PDFCite
Research ArticleOpen accessIn the abstractPhotostability of Ponceau 2R Doped Thin Film Sol-Gel Silica as Luminescent Solar CollectorS.M. RedaProblem statement: Current researches had shown that the photostability of a luminescent solar collector depend on the method of its preparation and type of using dye. This research therefore aimed at studying the stability of luminescent solar collector prepared by sol-gel spin coating method using Ponceau 2R. Approach: The effect of silica matrix on the photostability and fluorescence properties of … …Energy Research Journal, Vol. 1, Issue 1 · 30 Jun 2010 · 7,222 accessesView PDFCite
Research ArticleOpen accessIn the abstractLow-doping Effects of Nanostructure ZnO: Sn tin films annealed at different temperature in Nitrogen ambient to be applied as an Anti-reflecting coating (ARC)H. Abdullah, M.N. Norazia, S. Shaari et al.Problem statement: The focus of this research is to discover the significant influences of substituting low concentration Sn at Zn-site as an Anti-Reflecting Coating (ARC) for Zn1-xSnxO compound. The effects of tin dopants on the structural and morphology properties of ZnO thin films prepared using the sol-gel method were investigated. Approach: The effects of annealing temperature on the deposited films … …American Journal of Engineering and Applied Sciences, Vol. 3, Issue 1 · 31 Mar 2010 · 8,607 accessesView PDFCite
Research ArticleOpen accessIn the abstractSynthesis and Optical Properties of ZnO-TeO2 Glass SystemH. A.A. Sidek, S. Rosmawati, Z. A. Talib et al.Problem statement: Systematic series of ZnO-TeO2 glasses with mole fraction of 0.10-0.40 ZnO content with an interval of 0.05 were studied to obtain their physical and optical properties. Approach: All the glass samples were synthesized by rapid melting quenching method under controlled conditions, while their refractive indices (n) were measured by the EL X-02C high precision ellipsometer. The room temperature … …American Journal of Applied Sciences, Vol. 6, Issue 8 · 31 Aug 2009 · 14,077 accessesView PDFCite
Research ArticleOpen accessIn the abstractDeep Defects Annihilation in GaAs1-xNx Layers by Si-dopingN. Ben Sedrine, A. Hamdouni, J. Rihani et al.The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which … …American Journal of Applied Sciences, Vol. 4, Issue 1 · 30 Apr 2007 · 8,160 accessesView PDFCite
Research ArticleOpen accessIn the abstractPhotocurrent and Photoluminescence Investigations of GaInNAs and GaInNAs(Sb) Quantum Wells Grown by Molecular Beam EpitaxyS. Ben Bouzid, F. Bousbih, A Hamdouni et al.We have investigated photocurrent (PC) and photoluminescence (PL) in sequentially grown GaInNAs/GaAs and GaInNAs(Sb)/GaAsSbN quantum wells. Photocurrent transitions are analyzed by theoretical calculations using envelope function formalism taking into account the strain effect and the strong coupling between nitrogen localized state and the GaInAs band gap. The results are consistent with a type I band alignment and a conduction band … …American Journal of Applied Sciences, Vol. 2, Issue 9 · 30 Sep 2005 · 6,475 accessesView PDFCite
Research ArticleOpen accessIn the abstractUsing IRS Products to Recover 7ETM+ Defective ImagesMobasheri Mohammad Reza, Sadeghi Naeini AliOn May 31st, 2003, Landsat 7 faced an anomaly in the Scan Line Corrector (SLC) normal operation. This malfunctioning of SLC caused the individual scan lines alternately overlap each other and consequently produce large gaps at the edges of the image. Regarding the unique specification of ETM+ sensor on board of Landsat-7 satellite such as its spectral bands in the … …American Journal of Applied Sciences, Vol. 5, Issue 6 · 30 Jun 2008 · 6,963 accessesView PDFCite