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51 results for “thin film”
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Research ArticleOpen accessPhrase in the titleEffect of Laser Irradiation on the Structural and Electrical Properties of Co-Zn Ferrite Thin FilmNehad M. TashtoushThin films of irradiated and non-irradiated Co-Zn ferrite was prepared by the thermal evaporation method on a glass substrate. The samples were annealed at 200°C, 400°C and 600°C for 1hr. The XRD analysis of all kinds of films, prepared for this study, shows that the spinel phase is almost completed after annealing. The change of the XRD after annealing is … …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 7,039 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleMathematical Modeling and Characterization of Thin Film, Narrow Gap Sensor Array Units (SAU)Mahmoud Z. IskandaraniDesign, modeling, testing and analysis multi-gap PbPc sensor array units for the purpose of gas detection are carried out. The tested devices showed reduction in conductance as a function of increasing gap width and reducing film thickness and an increase as a function of temperature up to 160°C. An observed morphological change in the sublimed film is realized at 190°C … …American Journal of Applied Sciences, Vol. 7, Issue 9 · 30 Sep 2010 · 6,859 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleThermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin FilmsSatilmis Budak, Zhigang Xiao, Shujun YangThe multilayer thermoelectric devices including Ni/200 layers of Si/Si + Sb/200 layers of Si/Si + Ge/Ni thin films were fabricated using electron beam and DC/RF magnetron sputtering deposition systems. The thickness measurements have been performed using Filmetrics UV thickness measurement system. The Au contacts at the bottom and top of the fabricated thermoelectric devices were measured as 100 nm for … …American Journal of Engineering and Applied Sciences, Vol. 13, Issue 4 · 14 Nov 2020 · 6,717 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleThermoelectric and Optical Properties of Advanced Thermoelectric Devices from Different Multilayer Thin FilmsMebougna Drabo, Satilmis BudakThermoelectric devices were prepared using different multilayered thin film structures in the order of Ge/Si+Ge, Si+Ge, Si, Sb+Ge, Ge and SiO2/SiO2+Ge by DC/RF Magnetron Sputtering. The thickness of the deposited thin films were measured using Filmetrics UV thickness measurement system. The prepared thermoelectric devices have been modified with 5 MeV Si ions bombardments at the different fluences (doses) using Pelletron … …American Journal of Applied Sciences, Vol. 16, Issue 8 · 29 Aug 2019 · 8,119 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleHighly-Efficient Advanced Thermoelectric Devices from Different Multilayer Thin FilmsSatilmis Budak, Zhigang Xiao, Barry Johnson et al.The efficiency of the thermoelectric materials and devices is shown by the dimensionless Figure of merit, ZT. ZT is calculated by multiplying the Seebeck coefficient with square of the electrical conductivity and absolute temperature and dividing it all by the thermal conductivity. Thermoelectric devices were prepared using different multilayered thin film structures in the order of SiO2/SiO2 + Ge/Ge/Sb + … …American Journal of Engineering and Applied Sciences, Vol. 9, Issue 2 · 27 Apr 2016 · 8,372 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleDetermining Optical Constants of Selenium Thin Films using the Envelope MethodNehad M. Tashtoush, Osamah ALkasassbehTwo Selenium thin films were deposited on glass substrates using thermal evaporation technique. The optical constants (refractive index, absorption coefficient and extinction coefficient and energy gap) were calculated using the Transmittance (T) spectrums of the films in the spectral range of 500-900 nm. The envelope method was used to determine optical constants. The calculated refractive index was found to be … …American Journal of Applied Sciences, Vol. 10, Issue 2 · 15 Feb 2013 · 6,340 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleNatural Sensitizer for Dye-Sensitized Solar Cells Using Three Layers of Photoelectrode Thin Films with a Schottky BarrierHo Chang, Mu-Jung Kao, Tien-Li Chen et al.Problem statement: This study combines Au nanoparticles with TiO2 nanoparticles to form a Schottky barrier and applies it to the photoelectrode thin film of Dye-Sensitized Solar cells (DSSCs). Approach: First, commercial TiO2 powder (Degussa P25) was put into the alkaline solution to prepare TiO nanotubes (Tnt) by a hydrothermal process. Tnt were sintered at 550° to obtain TntC550 particles and … …Current Research in Nanotechnology, Vol. 1, Issue 1 · 15 Jun 2011 · 7,990 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleOptical Properties of Crosslinked Chitosan Thin Film with Glutaraldehyde Using Surface Plasmon Resonance TechniqueYap Wing Fen, W. Mahmood Mat Yunus, Mohd Maarof Moksin et al.Problem statement: The aim of this research is to study the optical properties of crosslinked chitosan thin film with glutaraldehyde using Surface Plasmon Resonance (SPR) technique. Approach: The crosslinked chitosan is synthesized by homogeneous reaction of medium molecular weight chitosan in aqueous acetic acid solution with glutaraldehyde as crosslinking agent. Four different amount of chitosan, i.e., 0.40, 0.50, 0.60 and … …American Journal of Engineering and Applied Sciences, Vol. 4, Issue 1 · 28 Jan 2011 · 9,633 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleCharacterization of Transparent Conductive Thin Films of In 2O 3:Sn by Spray Pyrolysis TechniqueSeyed Mohammad Rozati, Tohid GanjHighly conductive transparent In2O3:Sn (ITO) thin films were prepared onto glass substrate using the spray pyrolysis technique. It is observed that these films are polycrystalline with the preferred orientation of [400]. The extent of this orientation increases with substrate temperature. The results show that films with a sheet resistance as low as 35Ω/cm2 and with a transmittance as high as … …American Journal of Applied Sciences, Vol. 2, Issue 6 · 30 Jun 2005 · 6,766 accessesView PDFCite
Research ArticleOpen accessPhrase in the titleStudy of Au/n-Ti2S/p-Si/Al Schottky-Type Thin Film Heterojunction Solar Cells: Computer Simulation ModelingAli IbrahimThe Au/n-Ti2S/p-Si/Al heterojunction with intrinsic thin-layer solar cells were analyzed by AFORS-HET software program. Thickness of the emitter intrinsic layer and the interface state density of such cells were studied. In which, the intrinsic layer inserted between the Ti2S and crystalline p-type silicon substrate, reduce the interface state density. The thinner intrinsic layer is better than thicker one, when the … …American Journal of Applied Sciences, Vol. 12, Issue 4 · 3 Jun 2015 · 6,284 accessesView PDFCite