13 articles for “nodes density”

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Research ArticleOpen accessIn the abstractDisplacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and AnnealingM. Jadan, A. R. Chelyadinskii, V. Y. YavidThe process of boron displacement from the nodes into interstitial positions of interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with the help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing … …American Journal of Applied Sciences, Vol. 2, Issue 5 · 31 May 2005 · 6,983 accessesView PDF Cite

Research ArticleOpen accessIn the abstractLocalization of Implanted Impurities in SiliconM. Jadan, Jihad S.M. AddasiLocalization of implanted boron impurities at the nodes and interstitial of silicon depending on the implantation current density has been studied by the X-ray diffraction and astrophysical methods. A shares of the impurity at the lattice sites increases with growing current density due to the instantaneous vacancy concentration and suppression of the impurity displacement from the sites by silicon interstitial. …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 6,712 accessesView PDF Cite

Research ArticleOpen accessIn the abstractAn Effective Contributory Re-Keying Approach to Compute Conference KeyD. Thilagavathy, M. RajaramProblem statement: With the explosive growth of and internet and web applications many emerging group-oriented distributed applications such as tele/video-conferencing, multiplayer games are based on group communication model that need security services such as privacy and data integrity Hence a secure distributed group key agreement is required to establish and authenticate a common group key for secure and private communication. … …Journal of Computer Science, Vol. 7, Issue 8 · 15 Jul 2011 · 6,643 accessesView PDF Cite