7 results for “semiconductor technology”

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Research ArticleOpen accessIn the keywordsStudy on Contact Forms in Wafer Chemical Mechanical Polishing in NanomachiningSu Jianxiu, Du Jiaxi, Chen Xiqu, Kang RenkeChemical Mechanical Polishing (CMP) has become the most widely used planarization technology in the semiconductor manufacturing process. Problem statement: Studying the Contact Forms in Wafer Chemical Mechanical Polishing. Approach: A series test on the abrasion behavior and the lubricating behavior was conducted and then the test results were investigated by the abrasion and lubrication theory. Results: By the test results … …Current Research in Nanotechnology, Vol. 1, Issue 2 · 21 Jun 2011 · 7,282 accessesView PDF Cite

Research ArticleOpen accessIn the keywordsLow Cost Smart Sensor DesignTakialddin A. Al SmadiProblem statement: Sensor with local processing power that enables it to react to local conditions without having to refer back to the central controller. The size and the cost of smart sensor circuit have been reduced. Approach: The use of microcontroller, such as (PIC16C715), with an 8-bit ADC (Analogue to Digital Converter) in one chip. This reduction in the circuit … …American Journal of Engineering and Applied Sciences, Vol. 4, Issue 1 · 11 Feb 2016 · 7,574 accessesView PDF Cite

Research ArticleOpen accessIn the abstractUltra Low Power Single Edge Triggered Delay Flip Flop Based Shift Registers Using 10-Nanometer Carbon Nano Tube Field Effect TransistorRavi Thiyagarajan, Kannan VeerappanCarbon Nano Tube Field Effect Transistor is currently considered as promising successor of Metal Oxide Semiconductor Field Effect Transistor. The scaling down of the Metal Oxide Semiconductor device faced serious limits like short channel effect, tunnelling through gate oxide layer, associated leakage currents and power dissipation when its dimension shrink down to 22 nanometer range. Further scaling of Metal Oxide … …American Journal of Applied Sciences, Vol. 10, Issue 12 · 14 Oct 2013 · 6,749 accessesView PDF Cite

Research ArticleOpen accessIn the abstractA New Approach in Design and Operating Principle of Silicone Tactile SensorBakri Ali, Rozaini Othman, Rasdi Deraman, Muhammad Azmi AyubProblem statement: Research and development in tactile sensor are escalating due to the fact that advanced robot needs to interact with surrounding environments which is very complex, dynamic, uncontrolled and difficult to perceive reliably. Recent research has been focusing in development of new tactile sensor that takes advantage of advances in materials, Micro-Electromechanical Systems (MEMS) and semiconductor technology. To date, … …Journal of Computer Science, Vol. 6, Issue 8 · 31 Aug 2010 · 7,347 accessesView PDF Cite

Research ArticleOpen accessIn the abstractIterative Numerical Method of Gate Turn-Off Thyristor: Comparative Study Between Si and SiCS. M. Zahim, M. Norainon, J. M. Shawal, R. I.R.M. TaufikaProblem statement: Silicon (Si) has long been the dominant semiconductor of choice for high-power, high-temperature and high-frequency device applications. However, recently, wide bandgap semiconductors, particularly Silicon Carbide (SiC) has attracted because it offers tremendous benefits over other semiconductor materials in a large number of industrial and military. A change of technology from Si to SiC will revolutionize the power electronics … …American Journal of Engineering and Applied Sciences, Vol. 2, Issue 2 · 30 Jun 2009 · 8,123 accessesView PDF Cite

Research ArticleOpen accessIn the abstractDesign of a LOW Cost IC TesterLiakot Ali, Roslina Sidek, Ishak Aris et al.Low cost Integrated Circuit (IC) testing is now a burning issue in semiconductor technology. Conventional IC tester, Automatic Test Equipment (ATE), cannot cope with the today’s continuously increasing complexities in IC technology. Deterministic algorithm, which is an idea of 1960’s, is adopted in the ATE. Recently pseudo-random testing approach of IC testing has been emerged as an economically viable alternative … …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 7,063 accessesView PDF Cite

Research ArticleOpen accessAll words, across the recordAdaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide ThicknessB. Gopi, R. S.D. WahidabanuProblem statement: Since the advent of IC and VLSI technology, the demand for high-speed devices and equipment is growing very rapidly. Every individual researcher is marching towards the dream of achieving it. The role of a design engineer is becoming more challenging. As per Moore’s law, the packing density doubles every eighteen months. This is possible only by scaling down … …Journal of Computer Science, Vol. 8, Issue 4 · 1 Feb 2012 · 7,103 accessesView PDF Cite