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1 article for “Watkins Substitution”
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Research ArticleOpen accessIn the keywordsDisplacement of Boron from the Silicon Crystal Nodes by Interstitial Si Atoms During Implantation and AnnealingM. Jadan, A. R. Chelyadinskii, V. Y. YavidThe process of boron displacement from the nodes into interstitial positions of interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with the help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing … …American Journal of Applied Sciences, Vol. 2, Issue 5 · 31 May 2005 · 6,983 accessesView PDFCite