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19 articles for “Si-doping”
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Research ArticleOpen accessPhrase in the titleDeep Defects Annihilation in GaAs1-xNx Layers by Si-dopingN. Ben Sedrine, A. Hamdouni, J. Rihani et al.The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which … …American Journal of Applied Sciences, Vol. 4, Issue 1 · 30 Apr 2007 · 8,160 accessesView PDFCite
Research ArticleOpen accessEvery word in the titleEffect of Doping Position on the Active Silicon-on-Insulator Micro-Ring Resonator Based on Free Carrier InjectionB. Mardiana, Sahbuddin Shaari, P. Susthitha Menon et al.Problem statement: Metal interconnects have become significant limitation on the scaling of CMOS technologies in electronics integrated circuit. Silicon photonics has offers great potential to overcome this critical bottleneck due to the advantages of optical interconnects. Silicon-based optical micro-ring resonator is promising basic element of future electronic-photonic integrated circuits because of its wide applications on photonic devices such as modulator, … …American Journal of Applied Sciences, Vol. 9, Issue 9 · 9 Aug 2012 · 7,342 accessesView PDFCite
Research ArticleOpen accessEvery word in the titleLow-doping Effects of Nanostructure ZnO: Sn tin films annealed at different temperature in Nitrogen ambient to be applied as an Anti-reflecting coating (ARC)H. Abdullah, M.N. Norazia, S. Shaari et al.Problem statement: The focus of this research is to discover the significant influences of substituting low concentration Sn at Zn-site as an Anti-Reflecting Coating (ARC) for Zn1-xSnxO compound. The effects of tin dopants on the structural and morphology properties of ZnO thin films prepared using the sol-gel method were investigated. Approach: The effects of annealing temperature on the deposited films … …American Journal of Engineering and Applied Sciences, Vol. 3, Issue 1 · 31 Mar 2010 · 8,607 accessesView PDFCite
Research ArticleOpen accessIn the keywordsInvestigation of the Characteristics of Thulium Doped Alumina Nanoparticles for Applications in Silica-Based FibersNur Atiqa Bt Rahmat, Hairul Azhar Abd Rashid, H.Y. Wong, Mukter ZamanIt is reported that during the fabrication of doping RE ions into the silica preform, the distribution of particles is inhomogeneous and becomes uneven throughout the fiber which lead to unwanted spectroscopic characteristics. It is assumed that by using thulium doped with alumina, the problem with the inhomogeneity of the particles inside the fiber can be solved. With the incorporation … …American Journal of Applied Sciences, Vol. 14, Issue 1 · 26 Jan 2017 · 7,411 accessesView PDFCite
Research ArticleOpen accessIn the keywordsDetection of Exogenous Heavy Metal Pesticide Residues in Traditional Chinese Medicine Based on Fluorescent Carbon Quantum DotsYanan He, Shuyin WangThe analysis method based on fluorescent probes has received increasing attention due to its high sensitivity, fast response, and real-time visualization characteristics. Therefore, the application of fluorescent probes for rapid detection of heavy metal pesticide residues in traditional Chinese medicine is of great significance. This study innovatively synthesized B/N co-doped carbon quantum dots using 3-aminophenylboronic acid as the raw material, … …American Journal of Biochemistry and Biotechnology, Vol. 22, Issue 1 · 10 Apr 2026 · 1,610 accessesView PDFCite
Research ArticleOpen accessIn the keywordsSimple Fabrication and Characterization of Piezoelectric Nanogenerators from Cobalt-Doped Zinc Oxide NanofibersSuyitno, Syamsul Hadi, Mohd Zainizan Sahdan et al.The ferromagnetic cobalt doped into Zinc Oxide (ZnO) crystals is a promising method for enhancing the performance of Piezoelectric-Based Nano Generators (PENGs). The study reports the characterization and testing PENGs which simply fabricated from cobalt-doped ZnO nanofibers (NFs) synthesized by electro spinning machine. The electro spinning processes were conducted at a flow rate of 4 μL/min and at various cobalt … …American Journal of Applied Sciences, Vol. 14, Issue 7 · 29 Jul 2017 · 8,173 accessesView PDFCite
Research ArticleOpen accessIn the keywordsInfluence of Annealing Temperature on Characteristics of Bismuth Doped Zinc Oxide FilmsSirirat Tubsungnoen Rattanachan, Phanuwat Krongarrom, Thipwan FangsuwannarakIn this study, Bismuth (Bi) doped ZnO thin films were deposited on quartz substrates by a sol-gel spin coating method and annealed at different annealing temperatures of 200, 300, 400, 500, 600 and 700°C, respectively. Structural and optical properties of nanocrystalline Bi-doped ZnO film on quartz were investigated by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and UV-VIS spectrophotometer. … …American Journal of Applied Sciences, Vol. 10, Issue 11 · 1 Oct 2013 · 7,126 accessesView PDFCite
Research ArticleOpen accessIn the keywordsEffect of Film thickness on the Electrical and Structural Properties of CdS: In Thin FilmsShadia J. Ikhmayies, Riyad N. Ahmad-BitarPolycrystalline CdS:In thin films were prepared by the Spray Pyrolysis (SP) technique on glass substrates at a substrate temperature Ts= 490°C. The effect of film thickness on the electrical and structural properties of the films was investigated through the analysis of the I-V plots, x-ray diffraction spectra (XRD) and the scanning electron microscope (SEM) images. The conductivity of the films … …American Journal of Applied Sciences, Vol. 5, Issue 9 · 30 Sep 2008 · 6,910 accessesView PDFCite
Research ArticleOpen accessIn the keywordsEffect of Processing on the Electrical Properties of Spray-Deposited SnO2:F Thin FilmsShadia J. Ikhmayies, Riyad N. Ahmad-BitarHighly transparent SnO2:F thin films were produced by the Spray Pyrolysis (SP) technique to be used as forcontacts in the home made CdS/CdTe solar cells. Films of thickness 100-200 nm were prepared at substrate temperatures in the range 380-480°C. To improve the electrical properties of the films, annealing in nitrogen atmosphere at 400°C and etching by HNO3 were tried. The … …American Journal of Applied Sciences, Vol. 5, Issue 6 · 30 Jun 2008 · 7,002 accessesView PDFCite
Research ArticleOpen accessIn the abstractA Comparative SCAPS-1D Study of Lead-Free CsSnCl₃-Based Perovskite SCs Employing Different ETLsRony Tota, Shak Mahmudul Hasan, Md. Morsalin et al.Cesium tin chloride (CsSnCl3) has drawn considerable interest as a non-toxic absorber candidate for next-generation photovoltaic devices, offering an attractive combination of affordability, thermal robustness, and competitive conversion performance suitable for clean-energy deployment. In the present work, the photovoltaic behaviour of CsSnCl₃-based SCs was numerically examined using the SCAPS-1D software. Three distinct device stacks were constructed by varying the ETL, … …American Journal of Engineering and Applied Sciences, Vol. 19, Issue 1 · 22 May 2026 · 1,737 accessesView PDFCite