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8 articles for “Photoluminescence”
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Research ArticleOpen accessEvery word in the titleEffect of Thickness of Tris (8-Hydroxyquinolinato) Aluminum on the Photoluminescence and I-V Characteristic of Organic Light Emitting StructureLim Mei Yee, Wan Mahmood Mat Yunus, Zainal Abidin Talib, Anuar KassimProblem statement: How the thickness of the tris (8-hydroxyquinolinato) Aluminum (Alq3) effect the optical and electrical properties of organic light emitting diode. Approach: The optimum thickness, photoluminescence and current-voltage characteristic of Alq3 layer on N, N-bis (inaphthyl)- N,N-diphenyl-1,1-biphenyl-4,4-diamine (55 nm) layer in Organic Light-Emitting Devices (OLED) structure are reported. Alq3 and NPB organic layers are used as Electron Transport Layer … …American Journal of Applied Sciences, Vol. 7, Issue 9 · 30 Sep 2010 · 8,249 accessesView PDFCite
Research ArticleOpen accessEvery word in the titlePhotocurrent and Photoluminescence Investigations of GaInNAs and GaInNAs(Sb) Quantum Wells Grown by Molecular Beam EpitaxyS. Ben Bouzid, F. Bousbih, A Hamdouni et al.We have investigated photocurrent (PC) and photoluminescence (PL) in sequentially grown GaInNAs/GaAs and GaInNAs(Sb)/GaAsSbN quantum wells. Photocurrent transitions are analyzed by theoretical calculations using envelope function formalism taking into account the strain effect and the strong coupling between nitrogen localized state and the GaInAs band gap. The results are consistent with a type I band alignment and a conduction band … …American Journal of Applied Sciences, Vol. 2, Issue 9 · 30 Sep 2005 · 6,475 accessesView PDFCite
Research ArticleOpen accessIn the keywordsElectrical and Optical Properties of N, N`-Bis (Inaphthyl)-N,N`-Diphenyl-1,1`-Biphenyl-4,4`-Diamine as Hole Transport Layer in Organic Light Emitting DevicesM. Y. Lim, W. M.M. Yunus, Z. A. Talib et al.Problem statement: The aim of this research was to study the electrical and optical properties of N, N`-bis(Inaphthyl)-N,N`-diphenyl-1,1`-biphenyl-4,4`-diamine (NPB) organic materials often used as hole transport layer in Organic Light-Emitting Devices (OLED). Approach: The NPB layer was prepared using the thermal evaporation method. From photoluminescence spectra, two peaks at 630 and 480 nm were observed with 55 nm NPB. The … …American Journal of Engineering and Applied Sciences, Vol. 3, Issue 1 · 31 Mar 2010 · 9,125 accessesView PDFCite
Research ArticleOpen accessIn the keywordsAtomic Layer Epitaxial Growth of Gaas on Porous Silicon SubstrateMohamed Lajnef, Afrah Bardaoui, Isabelle Sagne et al.GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to … …American Journal of Applied Sciences, Vol. 5, Issue 5 · 31 May 2008 · 7,027 accessesView PDFCite
Research ArticleOpen accessIn the keywordsDeep Defects Annihilation in GaAs1-xNx Layers by Si-dopingN. Ben Sedrine, A. Hamdouni, J. Rihani et al.The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which … …American Journal of Applied Sciences, Vol. 4, Issue 1 · 30 Apr 2007 · 8,160 accessesView PDFCite
Research ArticleOpen accessIn the abstractOptical and Structure Analysis of ZnO:Al FilmNeilo Marcos Trindade, Michel Chaves, José Roberto Ribeiro Bortoleto et al.ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 4 · 5 Oct 2017 · 7,855 accessesView PDFCite
Research ArticleOpen accessIn the abstractA General Strategy to Enhance Upconversion luminescence in Rare-Earth-Ion-Doped Oxide NanocrystalsGuanying Chen, Lei XuWe report a general strategy to enhance upconversion luminescence from rare-earth-doped oxide nanocrystals through tailoring the local crystal filed around rare earth ions. We show that upconversion luminescence from oxide nanocrystals of various host lattice (Y2O3, Gd2O3 and ZnO) and of diverse rare-earth-ions (such as Er3+, Yb3+/Er3+, Yb3+/Ho3+ and Yb3+/Tm3+) was enhanced by orders of magnitude through an introduction of … …American Journal of Engineering and Applied Sciences, Vol. 9, Issue 1 · 18 Feb 2016 · 7,735 accessesView PDFCite
Research ArticleOpen accessIn the abstractNanocrystalline Zn0.9Mn0.1S Thin Film: Case StudiesMohammad Syuhaimi Ab-Rahman, Noor Azie Azura Mohd Arif, Abang Anuar Ehsan, Sahbudin ShaariProblem statement: The high quality of ZnS:Mn nanocrystals is important in nanotechnology industries. The perfect chemical procedure is significant to produce the best of nanocrystals. Hence, this research is concern on the good chemical method in processing manganese doped zinc sulphide nanocrystals. Approach: For the first step, Mn doped ZnS nanocrystals were synthesized by using sol gel spin coating method. … …American Journal of Applied Sciences, Vol. 8, Issue 8 · 19 Jul 2011 · 8,119 accessesView PDFCite