3 results for “M. Oueslati”

Research ArticleOpen accessIn the author namesElectronic Energies in Delta Doped AlGaAs/GaAs HeterostucturesA. Meftah, H. Ajlani, A. Marzouki et al.The band bending of the potential at the AlGaAs/GaAs interface increases with the electrons concentration in the GaAs channel. This band bending is often ignored in the theoretical calculation of the electronic energies and a linear potential approximation was used. This led to imprecise energy values and occupied subband configurations. We have taken account of the band bending in the … …American Journal of Applied Sciences, Vol. 5, Issue 4 · 30 Apr 2008 · 6,932 accessesView PDF Cite

Research ArticleOpen accessIn the author namesDetermination of Absorption Coefficients and Thermal Diffusivity of Modulated Doped GaAlAs/GaAs Heterostructure by Photothermal Deflection SpectroscopyS. Aloulou, M. Fathallah, M. Oueslati, A. SfaxiWe report in this study theoretical and experimental studies of photothermal deflection spectroscopy (PDS) for planar doped heterostructures AlGaAs/GaAs. The PDS spectra at T=300K are recorded by varying the wavelength of the excited radiation for different modulation frequencies. They show two different regions related to the fundamental electronic transitions from GaAs and Si doped AlGaAs. The DX levels have been … …American Journal of Applied Sciences, Vol. 2, Issue 10 · 31 Oct 2005 · 7,264 accessesView PDF Cite