Research ArticleOpen accessIn the keywordsIterative Numerical Method of Gate Turn-Off Thyristor: Comparative Study Between Si and SiCS. M. Zahim, M. Norainon, J. M. Shawal, R. I.R.M. TaufikaProblem statement: Silicon (Si) has long been the dominant semiconductor of choice for high-power, high-temperature and high-frequency device applications. However, recently, wide bandgap semiconductors, particularly Silicon Carbide (SiC) has attracted because it offers tremendous benefits over other semiconductor materials in a large number of industrial and military. A change of technology from Si to SiC will revolutionize the power electronics … …American Journal of Engineering and Applied Sciences, Vol. 2, Issue 2 · 30 Jun 2009 · 8,123 accessesView PDFCite