Research ArticleOpen accessPhrase in the titleDFM of Strained-Engineered MOSFETs Using Technology CADT. K. Maiti, C. K. MaitiProblem statement: In this study, a systematic study based on Technology CAD (TCAD) was taken up for the design and Virtual Wafer Fabrication (VWF) of strain-engineered MOSFETs in Si CMOS technology. Approach: A simple manufacturable process recipe was developed to induce uniaxial stress in channel region to obtain enhanced performance in CMOS in 45 nm technology node. Results: Using Synopsys … …American Journal of Engineering and Applied Sciences, Vol. 3, Issue 4 · 5 Nov 2010 · 7,668 accessesView PDFCite