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10 articles for “silicon substrate”
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Research ArticleOpen accessPhrase in the titleAtomic Layer Epitaxial Growth of Gaas on Porous Silicon SubstrateMohamed Lajnef, Afrah Bardaoui, Isabelle Sagne et al.GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to … …American Journal of Applied Sciences, Vol. 5, Issue 5 · 31 May 2008 · 7,029 accessesView PDFCite
Research ArticleOpen accessIn the keywordsThe Effect of Rapid Thermal Annealing Towards the Performance of Screen-Printed Si Solar CellShahrul Anizan, Cheow Siu Leong, Khairymaza Lee Yusri et al.Problem statement: Solar cells are used to capture the photons which generate the energy. However the efficiency of the cells to turn the amount of photon to electricity needs to be high and so the cells enhancement is needed. This involved the whole process of the developing of the cells, thus annealing process is one of the important steps that … …American Journal of Applied Sciences, Vol. 8, Issue 3 · 25 Mar 2011 · 7,228 accessesView PDFCite
Research ArticleOpen accessIn the keywordsThe Polishing of Cutting-Edge Polymer-on-Glass for Pigtailing PreparationMohammad Syuhaimi Ab-Rahman, Fazlinda Ab-Aziz, Noor Azie Azura Mohd Arif et al.Problem statement: The high quality of cutting-edge surface is important in optical waveguide's efficiency. The perfect polishing of end surface is significant to deliver the best quality of light waves and minimize the device losses such as insertion loss and return loss. Hence, this research is concern on the parameters in polishing SU-8 polymer to increase the efficiency of waveguide. … …American Journal of Engineering and Applied Sciences, Vol. 2, Issue 1 · 31 Mar 2009 · 9,151 accessesView PDFCite
Research ArticleOpen accessIn the abstractReversible Ionizing Radiation Sensors Based on Carbon NanotubesKenneth Fontánez, Abniel Machín, María C. Cotto et al.Vertically Aligned Carbon Nanotubes (VA-CNTs) were grown by Chemical Vapor Deposition (CVD) on a silicon substrate with alternating layers of TiN and SiO2. VA-CNTs were exposed to X-ray radiation to study the change in resistivity later. Preliminary results show an increase in the resistivity of CNTs as a function of radiation exposure time, which means that the structure responds successfully … …American Journal of Engineering and Applied Sciences, Vol. 13, Issue 1 · 3 Feb 2020 · 7,234 accessesView PDFCite
Research ArticleOpen accessIn the abstractThe Rotation Effect on Shear Horizontal Surface Wave in a Piezoelectric Semi-Space Covered by a Semiconductor FilmFatimah AlshaikhIn this study, a mathematical model of the rotation effect on Shear Horizontally wave (SH-wave) propagation in a piezoelectric semi-space covered by a semiconductor film is investigated. The semiconducting layer is rotating with a constant angular velocity and the interface between the piezoelectric substrate and the semiconductor layer is imperfectly bonded. Furthermore, the surfaces of the bilayer system assumed free … …Journal of Mathematics and Statistics, Vol. 13, Issue 2 · 29 Apr 2017 · 7,214 accessesView PDFCite
Research ArticleOpen accessIn the abstractStudy of Au/n-Ti2S/p-Si/Al Schottky-Type Thin Film Heterojunction Solar Cells: Computer Simulation ModelingAli IbrahimThe Au/n-Ti2S/p-Si/Al heterojunction with intrinsic thin-layer solar cells were analyzed by AFORS-HET software program. Thickness of the emitter intrinsic layer and the interface state density of such cells were studied. In which, the intrinsic layer inserted between the Ti2S and crystalline p-type silicon substrate, reduce the interface state density. The thinner intrinsic layer is better than thicker one, when the … …American Journal of Applied Sciences, Vol. 12, Issue 4 · 3 Jun 2015 · 6,284 accessesView PDFCite
Research ArticleOpen accessIn the abstractCharacterization of Boron Carbonitride (BCN) Thin Films Deposited by Radiofrequency and Microwave Plasma Enhanced Chemical Vapor DepositionM.A. Mannan, M. Nagano, K. Shigezumi et al.Boron carbonitride (BCN) thin films with a thickness of ~4 µm were synthesized on Si (100) substrate by radiofrequency and microwave plasma enhanced chemical vapor deposition using trimethylamine borane [(CH3)3N.BH3)] as a molecular precursor. The microstructures of the films were evaluated using field emission scanning electron microscopy (FE-SEM) and X-ray diffractometry (XRD). Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron … …American Journal of Applied Sciences, Vol. 5, Issue 6 · 30 Jun 2008 · 7,375 accessesView PDFCite
Research ArticleOpen accessIn the abstractLow-g Area-changed MEMS Accelerometer Using Bulk Silicon TechniqueBadariah Bais, Burhanuddin Yeop MajlisA bulk micromachined accelerometer based on an area variation capacitive sensing for low-g applications was developed. The accelerometer was designed with ribbed-style fingers structure on the movable mass connected in parallel and suspended over stationary electrodes composed of differential comb fingers by means of suspension beams anchored onto the substrate. A folded, rigid truss suspension design with low spring constant … …American Journal of Applied Sciences, Vol. 5, Issue 6 · 30 Jun 2008 · 7,635 accessesView PDFCite
Research ArticleOpen accessIn the abstractDeep Defects Annihilation in GaAs1-xNx Layers by Si-dopingN. Ben Sedrine, A. Hamdouni, J. Rihani et al.The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which … …American Journal of Applied Sciences, Vol. 4, Issue 1 · 30 Apr 2007 · 8,163 accessesView PDFCite
Research ArticleOpen accessIn the abstractOptical and Structure Analysis of ZnO:Al FilmNeilo Marcos Trindade, Michel Chaves, José Roberto Ribeiro Bortoleto et al.ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 4 · 5 Oct 2017 · 7,862 accessesView PDFCite