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Research ArticleOpen accessIn the keywordsAdaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide ThicknessB. Gopi, R. S.D. WahidabanuProblem statement: Since the advent of IC and VLSI technology, the demand for high-speed devices and equipment is growing very rapidly. Every individual researcher is marching towards the dream of achieving it. The role of a design engineer is becoming more challenging. As per Moore’s law, the packing density doubles every eighteen months. This is possible only by scaling down … …Journal of Computer Science, Vol. 8, Issue 4 · 1 Feb 2012 · 7,103 accessesView PDF Cite

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