5 results for “new semiconductor devices”

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Research ArticleOpen accessIn the keywordsNeural-Based Models of Semiconductor Devices for SPICE SimulatorHanene Ben Hammouda, Mongia Mhiri, Zièd Gafsi, Kamel BesbesThe paper addresses a simple and fast new approach to implement Artificial Neural Networks (ANN) models for the MOS transistor into SPICE. The proposed approach involves two steps, the modeling phase of the device by NN providing its input/output patterns, and the SPICE implementation process of the resulting model. Using the Taylor series expansion, a neural based small-signal model is … …American Journal of Applied Sciences, Vol. 5, Issue 4 · 30 Apr 2008 · 8,577 accessesView PDF Cite

Research ArticleOpen accessIn the abstractHigh Performance and Low Leakage 3DSOI Fin-FET SRAMD. Sudha, Ch. Santhirani, Sreenivasa Rao IjjadaIn recent semiconductor designs, the major key factors: Competent device simulations, precise device characterization, well power optimization, new architectural design and cost-effective fabrication drives the designers attention towards multi gate transistors as an alternative to MOSFET. Non planner device structures are a competitive edge over planner devices. Silicon-on-Insulator (SOI) FinFETs are hopeful among variety of multi-gate structures as they have … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 1 · 9 Feb 2017 · 7,346 accessesView PDF Cite

Research ArticleOpen accessIn the abstractPower Consumption and Performance’s Library on DSPs: Case Study MPEG2Jalel Ktari, Mohamed Abid, Nathalie Julien, Johann LaurentThe growing demand for portable electronic devices has led to an increased emphasis on power consumption within the semiconductor industry. As a result, designers are now encouraged to consider the impact of their decisions not only on speed and area, but also on power throughout the design space exploration. This article presents a high-level design space exploration methodology. It allows … …Journal of Computer Science, Vol. 3, Issue 3 · 31 Mar 2007 · 6,827 accessesView PDF Cite

Research ArticleOpen accessIn the abstractSingle-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD ToolsUda Hashim, Amiza RasmiSimulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in … …American Journal of Applied Sciences, Vol. 3, Issue 7 · 31 Jul 2006 · 7,418 accessesView PDF Cite

Research ArticleOpen accessAll words, across the recordAdaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide ThicknessB. Gopi, R. S.D. WahidabanuProblem statement: Since the advent of IC and VLSI technology, the demand for high-speed devices and equipment is growing very rapidly. Every individual researcher is marching towards the dream of achieving it. The role of a design engineer is becoming more challenging. As per Moore’s law, the packing density doubles every eighteen months. This is possible only by scaling down … …Journal of Computer Science, Vol. 8, Issue 4 · 1 Feb 2012 · 7,103 accessesView PDF Cite