4 results for “nano transistor”

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Research ArticleOpen accessEvery word in the titleUltra Low Power Single Edge Triggered Delay Flip Flop Based Shift Registers Using 10-Nanometer Carbon Nano Tube Field Effect TransistorRavi Thiyagarajan, Kannan VeerappanCarbon Nano Tube Field Effect Transistor is currently considered as promising successor of Metal Oxide Semiconductor Field Effect Transistor. The scaling down of the Metal Oxide Semiconductor device faced serious limits like short channel effect, tunnelling through gate oxide layer, associated leakage currents and power dissipation when its dimension shrink down to 22 nanometer range. Further scaling of Metal Oxide … …American Journal of Applied Sciences, Vol. 10, Issue 12 · 14 Oct 2013 · 6,749 accessesView PDF Cite

Research ArticleOpen accessEvery word in the titleComparative Analysis of Reversible Logic Based Carbon Nano Tube Field Effect Transistor Multiplexer PerformanceY. Varthamanan, V. KannanThis study is about the design and analysis of a reversible logic based multiplexer, that is realized using carbon nano tube transistor. Reversible logic realization of the digital circuits offers numerous advantages over conventional circuit design. Power analysis was performed using HSPICE simulation software and the results are obtained for the 2×1 and 4×1 multiplexer transient behavior. The power consumption … …American Journal of Applied Sciences, Vol. 10, Issue 11 · 5 Oct 2013 · 6,637 accessesView PDF Cite

Research ArticleOpen accessIn the keywordsA Novel Integrated SET Based Inverter for Nano Power Electronic ApplicationsNegin Moezi, Daryoosh Dideban, Abbas KetabiIn this research an emerging field of power electronics in nanotechnology is survived. This application-based technology today is called Nano Power Electronics. It utilizes nano electronic transistors in switching applications in the range of nano power for signal shaping purposes. In recent years Single Electron Transistors are highly interested in nano electronic applications. They have got inherently fast tunneling rate, … …American Journal of Engineering and Applied Sciences, Vol. 1, Issue 3 · 30 Sep 2008 · 7,364 accessesView PDF Cite

Research ArticleOpen accessIn the abstractStudy the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy LithographyArash Dehzangi, Farhad Larki, E.B. Saion et al.Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronic in order to less energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by … …American Journal of Applied Sciences, Vol. 8, Issue 9 · 1 Aug 2011 · 8,635 accessesView PDF Cite