Research ArticleOpen accessIn the keywordsResidual Defects in Silicon Implanted with Boron and Phosphorous IonsM. JadanAccumulation of radiation defects in Si implanted with B+ or P+ ions, and formation of the residual extended defects (dislocation loops, rod-like defects) in the process of successive thermal treatment have been studied. The anomalies observed in the formation of the extended defects are associated with the elastic stresses in the damaged regions affecting the process of radiation defects clustering. …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 6,931 accessesView PDFCite
Review ArticleOpen accessIn the abstractMulti-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic DevicesDanhong Huang, Fei Gao, D.A. Cardimona et al.A multi-timescale hybrid model is proposed to study microscopically the degraded performance of electronic devices, covering three individual stages of radiation effects studies, including ultra-fast displacement cascade, intermediate defect stabilization and cluster formation, as well as slow defect reaction and migration. Realistic interatomic potentials are employed in molecular-dynamics calculations for the first two stages up to 100 ns as well … …Space Science International, Vol. 3, Issue 1 · 15 Jun 2015 · 10,235 accessesView PDFCite