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47 results for “device simulation”
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Research ArticleOpen accessPhrase in the titleSingle-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD ToolsUda Hashim, Amiza RasmiSimulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in … …American Journal of Applied Sciences, Vol. 3, Issue 7 · 31 Jul 2006 · 7,418 accessesView PDFCite
Research ArticleOpen accessIn the keywordsPerformance Evaluation of an Assisting Device for Training "Normal-Like" Sit To Stand MovementPierluigi Rea, Erika Ottaviano, Gianni CastelliThis paper presents a performance evaluation and results on the modelling and simulation of an assisting device to be used as aiding or guiding system for people with reduced mobility. There is a high level of motivation for elderly to perform independently basic Activities of Daily Life (ADL). Therefore, it is of great interest to design and implement reliable assisting … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 3 · 26 Jul 2017 · 7,694 accessesView PDFCite
Research ArticleOpen accessIn the keywordsAdaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide ThicknessB. Gopi, R. S.D. WahidabanuProblem statement: Since the advent of IC and VLSI technology, the demand for high-speed devices and equipment is growing very rapidly. Every individual researcher is marching towards the dream of achieving it. The role of a design engineer is becoming more challenging. As per Moore’s law, the packing density doubles every eighteen months. This is possible only by scaling down … …Journal of Computer Science, Vol. 8, Issue 4 · 1 Feb 2012 · 7,103 accessesView PDFCite
Research ArticleOpen accessIn the keywordsAnalysis and Mechanical Design Solutions for Sit-To-Stand Assisting DevicesPierluigi Rea, Erika OttavianoSit-to-stand can be considered the most common daily-life activity and it can be defined as a change of posture, in which the base of support is transferred from the seat to the feet. It requires both voluntary movement of different body segments that contribute to the equilibrium and control during an important displacement of the Centre Of Gravity of the … …American Journal of Engineering and Applied Sciences, Vol. 9, Issue 4 · 11 Dec 2016 · 7,834 accessesView PDFCite
Research ArticleOpen accessIn the abstractA Comparative SCAPS-1D Study of Lead-Free CsSnCl₃-Based Perovskite SCs Employing Different ETLsRony Tota, Shak Mahmudul Hasan, Md. Morsalin et al.Cesium tin chloride (CsSnCl3) has drawn considerable interest as a non-toxic absorber candidate for next-generation photovoltaic devices, offering an attractive combination of affordability, thermal robustness, and competitive conversion performance suitable for clean-energy deployment. In the present work, the photovoltaic behaviour of CsSnCl₃-based SCs was numerically examined using the SCAPS-1D software. Three distinct device stacks were constructed by varying the ETL, … …American Journal of Engineering and Applied Sciences, Vol. 19, Issue 1 · 22 May 2026 · 1,737 accessesView PDFCite
Research ArticleOpen accessIn the abstractA Comparative Analysis of IoT Security Frameworks With BIoTCGaurav Vats, Sarvesh Tanwar, Pankaj Kumar SharmaThe Internet of Things (IoT) has reshaped the modern intelligent environments, but it remains vulnerable to sophisticated attacks such as Man-in-the-Middle (MITM), RFID cloning, unauthorized access, and social engineering. Block Internet of Things Chain (BIoTC) introduces a simulation-based approach to address these security issues. While various frameworks have been proposed to secure IoT systems, most of them fall short in … …Journal of Computer Science, Vol. 22, Issue 3 · 28 Mar 2026 · 1,474 accessesView PDFCite
Research ArticleOpen accessIn the abstractModeling and Simulation of the Impact of Temperature on Single Point Load Cell using Trnsys 16.0: Measured, Uncompensated and Error Data for Zaria Kaduna StateAlbright A. Edet, Afolayan M. O., Umar A. UmarA load cell is a piece of machined metal called a transducer or load sensor. As a measuring device, the entire framework is prone to the impact of environmental forces which can produce errors in the load cell output. The most significant force or input modifier is high ambient temperature. Typical meteorological year document demonstrates that in March, April, and … …Journal of Mechatronics and Robotics, Vol. 6, Issue 1 · 7 Jun 2022 · 5,727 accessesView PDFCite
Review ArticleOpen accessIn the abstractMechatronics Around the World - at a GlanceRachita Sharma, Bhaskar DhimanIncreasing performance standards for complex procedures, which includes business equipment and their steadily growing technical importance, might require new processes to be applied within the procedure of product advent. The important thing concept in the back of our proposed approach is to combine one of a kind stages consisting of design, simulation and physical implementations in product or device advent. … …Journal of Mechatronics and Robotics, Vol. 5, Issue 1 · 12 Feb 2021 · 7,806 accessesView PDFCite
Research ArticleOpen accessIn the abstractA Comprehensive Analysis of Simulated results for the Performance of AODV and TORA Routing Protocols in Mobile Ad-hoc NetworksVelmurugan Thambusamy, Navitha SrinivasanA Mobile Ad-Hoc Network (MANET) is underpinning less system of movable devices connected by wireless links. Every device in MANET moves arbitrarily on any path with no impediments and this free movement helps in transforming its links to new devices promptly and unpredictably. MANETs do not require a predefined arrangement or centralized administration to interconnect with each other. This research … …Journal of Computer Science, Vol. 15, Issue 4 · 2 May 2019 · 7,473 accessesView PDFCite
Research ArticleOpen accessIn the abstractHigh Performance and Low Leakage 3DSOI Fin-FET SRAMD. Sudha, Ch. Santhirani, Sreenivasa Rao IjjadaIn recent semiconductor designs, the major key factors: Competent device simulations, precise device characterization, well power optimization, new architectural design and cost-effective fabrication drives the designers attention towards multi gate transistors as an alternative to MOSFET. Non planner device structures are a competitive edge over planner devices. Silicon-on-Insulator (SOI) FinFETs are hopeful among variety of multi-gate structures as they have … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 1 · 9 Feb 2017 · 7,346 accessesView PDFCite