Research ArticleOpen accessIn the keywordsGate Replacement Technique for Reducing Leakage Current in Wallace Tree MultiplierNaveen Raman, ThanushkodiLeakage power has become more significant in the power dissipation of today’s CMOS circuits. This affects the portable battery operated devices directly. The multipliers are the main key for designing an energy efficient processor, where the multiplier design decides the digital signal processors efficiency. In this study gate replacement technique is used to reduce the leakage power in 4×4 Wallace … …Journal of Computer Science, Vol. 9, Issue 2 · 30 Mar 2013 · 6,763 accessesView PDFCite
Research ArticleOpen accessIn the abstractHigh Performance and Low Leakage 3DSOI Fin-FET SRAMD. Sudha, Ch. Santhirani, Sreenivasa Rao IjjadaIn recent semiconductor designs, the major key factors: Competent device simulations, precise device characterization, well power optimization, new architectural design and cost-effective fabrication drives the designers attention towards multi gate transistors as an alternative to MOSFET. Non planner device structures are a competitive edge over planner devices. Silicon-on-Insulator (SOI) FinFETs are hopeful among variety of multi-gate structures as they have … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 1 · 9 Feb 2017 · 7,346 accessesView PDFCite