3 results for “Silicon-on-Insulator (SOI)”

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Research ArticleOpen accessIn the keywordsEffect of Doping Position on the Active Silicon-on-Insulator Micro-Ring Resonator Based on Free Carrier InjectionB. Mardiana, Sahbuddin Shaari, P. Susthitha Menon et al.Problem statement: Metal interconnects have become significant limitation on the scaling of CMOS technologies in electronics integrated circuit. Silicon photonics has offers great potential to overcome this critical bottleneck due to the advantages of optical interconnects. Silicon-based optical micro-ring resonator is promising basic element of future electronic-photonic integrated circuits because of its wide applications on photonic devices such as modulator, … …American Journal of Applied Sciences, Vol. 9, Issue 9 · 9 Aug 2012 · 7,342 accessesView PDF Cite

Research ArticleOpen accessIn the abstractHigh Performance and Low Leakage 3DSOI Fin-FET SRAMD. Sudha, Ch. Santhirani, Sreenivasa Rao IjjadaIn recent semiconductor designs, the major key factors: Competent device simulations, precise device characterization, well power optimization, new architectural design and cost-effective fabrication drives the designers attention towards multi gate transistors as an alternative to MOSFET. Non planner device structures are a competitive edge over planner devices. Silicon-on-Insulator (SOI) FinFETs are hopeful among variety of multi-gate structures as they have … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 1 · 9 Feb 2017 · 7,346 accessesView PDF Cite

Research ArticleOpen accessIn the abstractStudy the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy LithographyArash Dehzangi, Farhad Larki, E.B. Saion et al.Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronic in order to less energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by … …American Journal of Applied Sciences, Vol. 8, Issue 9 · 1 Aug 2011 · 8,635 accessesView PDF Cite