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Research ArticleOpen accessIn the keywordsStudy the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy LithographyArash Dehzangi, Farhad Larki, E.B. Saion et al.Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronic in order to less energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by … …American Journal of Applied Sciences, Vol. 8, Issue 9 · 1 Aug 2011 · 8,635 accessesView PDF Cite

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