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Research ArticleOpen accessIn the keywordsHigh Performance and Low Leakage 3DSOI Fin-FET SRAMD. Sudha, Ch. Santhirani, Sreenivasa Rao IjjadaIn recent semiconductor designs, the major key factors: Competent device simulations, precise device characterization, well power optimization, new architectural design and cost-effective fabrication drives the designers attention towards multi gate transistors as an alternative to MOSFET. Non planner device structures are a competitive edge over planner devices. Silicon-on-Insulator (SOI) FinFETs are hopeful among variety of multi-gate structures as they have … …American Journal of Engineering and Applied Sciences, Vol. 10, Issue 1 · 9 Feb 2017 · 7,346 accessesView PDF Cite

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