Search | Science Publications

Research ArticleOpen accessIn the keywordsSTUDY OF THE POSSIBILITY OF POLYTYPE 3C SILICON CARBIDE BULK CRYSTALS GROWING FOR USE IN POWER DEVICESLebedev Alexander Alexandrovich, Bulat Pavel ViktorovichDue to its electro-physical parameters, the silicon carbide is a promising material for power devices, including the microwave range. In recent years there has been considerable progress in the development of power devices, based on SiC. Serious problem, which hinders the widespread commercialization of SiC bipolar power devices, is the p-n structures degradation during high densities of passing forward current. … …American Journal of Applied Sciences, Vol. 11, Issue 10 · 5 Dec 2014 · 6,348 accessesView PDF Cite

1 article for “Hetero-Polytype Structure”