3 articles for “Epitaxial Growth”

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Research ArticleOpen accessPhrase in the titleAtomic Layer Epitaxial Growth of Gaas on Porous Silicon SubstrateMohamed Lajnef, Afrah Bardaoui, Isabelle Sagne et al.GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to … …American Journal of Applied Sciences, Vol. 5, Issue 5 · 31 May 2008 · 7,027 accessesView PDF Cite

Research ArticleOpen accessIn the keywordsFacile Synthesis of AgCl Hollow Nanospheres for Enhanced Photocatalytic PropertiesJing Chen, Yuling Zhao, Xinhui Liu et al.AgCl hollow nanospheres have been synthesized successfully via a hard-template approach using silica nanospheres as hard template for the first time. The phase, size and morphology of the as-prepared AgCl were investigated by X-Ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM); which reveals that the cubic AgCl hollow nanospheres with a cell constant a = 5.549 Å are 220 nm … …American Journal of Engineering and Applied Sciences, Vol. 8, Issue 3 · 22 May 2015 · 7,350 accessesView PDF Cite

Research ArticleOpen accessAll words, across the recordAcquisition and Research of the p-3C-SiC Epitaxial Layers Based on the 6H-SiC Semi-Insulating SubstratesLebedev Alexander Alexandrovich, S.P. Lebedev, E.V. Bogdanova et al.By now we know almost nothing about works on production of p-3C-SiC. Probably, it is due to the fact that the basic acceptor impurity (aluminium) accumulates on the interfaces of the twins and other structural defects in the 3C film and it is electrically neutral. We managed to produce the highly doped layers p-3C based on the conducting substrates of … …American Journal of Applied Sciences, Vol. 12, Issue 3 · 27 May 2015 · 6,466 accessesView PDF Cite