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Research ArticleOpen accessIn the keywordsAcquisition and Research of the p-3C-SiC Epitaxial Layers Based on the 6H-SiC Semi-Insulating SubstratesLebedev Alexander Alexandrovich, S.P. Lebedev, E.V. Bogdanova et al.By now we know almost nothing about works on production of p-3C-SiC. Probably, it is due to the fact that the basic acceptor impurity (aluminium) accumulates on the interfaces of the twins and other structural defects in the 3C film and it is electrically neutral. We managed to produce the highly doped layers p-3C based on the conducting substrates of … …American Journal of Applied Sciences, Vol. 12, Issue 3 · 27 May 2015 · 6,466 accessesView PDFCite