6 results for “Drain Current”

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Research ArticleOpen accessIn the keywordsCHARACTERISTIC ANALYSIS OF DUAL GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR BY MATHEMATICAL MODELINGC.A. Abdul Nazar, V. KannanIn this study, the characteristics of DGMOSFET were obtained using mathematical modeling. The variations of characteristics were analyzed with different conditions into consideration. Different parameters behavior is analyzed, such as Transcapacitance variation with the gate voltage, threshold voltage variation with respect to lateral straggle parameter and temperature, mobile charge density variation is also analyzed and also the drain characteristics of … …American Journal of Applied Sciences, Vol. 11, Issue 8 · 5 May 2014 · 6,618 accessesView PDF Cite

Research ArticleOpen accessIn the keywordsLow Power Analog Multiplier Using MifgmosK. Duraisamy, U. RagavendranA novel 4-quadrant analog multiplier using Floating Gate MOS (FGMOS) transistors operating in saturation region are implemented. Floating gate MOSFETs are being utilized in a number of new and existing analog applications. These devices are not only useful for designing memory elements but also we can implement circuit elements. The main advantage in FGMOS is that the drain current is … …Journal of Computer Science, Vol. 9, Issue 4 · 14 May 2013 · 6,343 accessesView PDF Cite

Review ArticleOpen accessIn the abstractAI-Based Techniques for DDoS Attack Detection in WSN: A Systematic Literature ReviewMohammed Al-Naeem, Mohammed Ashikur Rahman, Adamu AbuBakar Ibrahim, M.M. Hafizur RahmanWireless Sensor Networks (WSNs) are currently being used in various industries such as healthcare, engineering, the environment and so on. Security is a significant issue for WSN due to its infrastructure and limited physical security. Distributed Denial of Service (DDoS) is one of the most vulnerable attacks that can be defined as attacks launched from multiple ends into a set … …Journal of Computer Science, Vol. 16, Issue 6 · 29 Jun 2020 · 8,375 accessesView PDF Cite

Research ArticleOpen accessIn the abstractStudy the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy LithographyArash Dehzangi, Farhad Larki, E.B. Saion et al.Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronic in order to less energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors. Approach: The Junction-less side gate silicon Nano-wire transistor has been fabricated by … …American Journal of Applied Sciences, Vol. 8, Issue 9 · 1 Aug 2011 · 8,635 accessesView PDF Cite

Research ArticleOpen accessIn the abstractThe Malaysian Public Procurement's Prevalent System and its WeaknessesRohana Othman, Husein Zakaria, Norlaili Nordin et al.Problem statement: This study examined the public procurement system as prevalent in the Malaysian government system of administration. Various aspects of public procurement are outlined including types and the processes that entail public procurement. This study also highlighted the weaknesses in the manual public procurement processes that are opened to potential abuse and mismanagement resulting in corruption. This study places … …American Journal of Economics and Business Administration, Vol. 2, Issue 1 · 31 Mar 2010 · 10,498 accessesView PDF Cite

Research ArticleOpen accessIn the abstractKnowledge Representation of Ion-Sensitive Field-Effect Transistor Voltage Response for Potassium Ion Concentration Detection in Mixed Potassium/Ammonium Ion SolutionsWan Fazlida Hanim Abdullah, Mohd Alaudin Mohd Ali, Md Shabiul Islam, Masuri OthmanProblem statement: The Ion-Sensitive Field-Effect Transistor (ISFET) is a metal-oxide field-effect transistor-based sensor that reacts to ionic activity at the electrolye/membrane/gate interface. The ionic sensor faces issue of selectivity from interfering ions that contribute to the sensor electrical response in mixed solutions. Approach: We present the training data collection of ISFET voltage response for the purpose of post-processing stage neural … …American Journal of Applied Sciences, Vol. 7, Issue 1 · 31 Jan 2010 · 7,816 accessesView PDF Cite