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Research ArticleOpen accessIn the keywordsCHARACTERISTIC ANALYSIS OF DUAL GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR BY MATHEMATICAL MODELINGC.A. Abdul Nazar, V. KannanIn this study, the characteristics of DGMOSFET were obtained using mathematical modeling. The variations of characteristics were analyzed with different conditions into consideration. Different parameters behavior is analyzed, such as Transcapacitance variation with the gate voltage, threshold voltage variation with respect to lateral straggle parameter and temperature, mobile charge density variation is also analyzed and also the drain characteristics of … …American Journal of Applied Sciences, Vol. 11, Issue 8 · 5 May 2014 · 6,618 accessesView PDFCite