4 articles for “AlGaAs/GaAs”

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Research ArticleOpen accessPhrase in the titleElectronic Energies in Delta Doped AlGaAs/GaAs HeterostucturesA. Meftah, H. Ajlani, A. Marzouki et al.The band bending of the potential at the AlGaAs/GaAs interface increases with the electrons concentration in the GaAs channel. This band bending is often ignored in the theoretical calculation of the electronic energies and a linear potential approximation was used. This led to imprecise energy values and occupied subband configurations. We have taken account of the band bending in the … …American Journal of Applied Sciences, Vol. 5, Issue 4 · 30 Apr 2008 · 6,931 accessesView PDF Cite

Research ArticleOpen accessPhrase in the titleDESIGN OF HIGH-SPEED PARALLEL IN PARALLEL OUT SHIFT REGISTER USING ALGAAS/GAAS MODFET TECHNOLOGYV. Ganesan, K. S. ShajiThis study enumerates the efficient design and analysis of Parallel In Parallel Out (PIPO) shift register using AlGaAs/GaAs MODFET D Flip-flop. The transient and power analysis are obtained with operating voltage at 1.3 V for the D flip-flop and PIPO shift register using pspice tool. There are many issues facing while integrating many number of transistors like delay, power dissipation, … …American Journal of Applied Sciences, Vol. 11, Issue 8 · 8 May 2014 · 7,146 accessesView PDF Cite

Research ArticleOpen accessEvery word in the titleOptimal Dark Current Reduction in Quantum Well 9 µm GaAs/AlGaAs Infrared Photodetectors with Improved DetectivityShahram Mohammad Nejad, Saeed Olyaee, Maryam PourmahyabadiIn this research, an optimization approach is presented to decrease the dark current in GaAs/AlGaAs QWIPs. The dark current noise is reduced by increasing Al density in barriers, decreasing detector dimensions and increasing the periodic length of the structure. In addition, increasing the number of periods can reduce both the dark current and responsivity. Therefore, devices can be optimally designed … …American Journal of Applied Sciences, Vol. 5, Issue 8 · 31 Aug 2008 · 7,188 accessesView PDF Cite

Research ArticleOpen accessIn the keywordsDetermination of Absorption Coefficients and Thermal Diffusivity of Modulated Doped GaAlAs/GaAs Heterostructure by Photothermal Deflection SpectroscopyS. Aloulou, M. Fathallah, M. Oueslati, A. SfaxiWe report in this study theoretical and experimental studies of photothermal deflection spectroscopy (PDS) for planar doped heterostructures AlGaAs/GaAs. The PDS spectra at T=300K are recorded by varying the wavelength of the excited radiation for different modulation frequencies. They show two different regions related to the fundamental electronic transitions from GaAs and Si doped AlGaAs. The DX levels have been … …American Journal of Applied Sciences, Vol. 2, Issue 10 · 31 Oct 2005 · 7,262 accessesView PDF Cite