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Research ArticleOpen accessIn the abstractDesign of a High-Performance IP Switching ArchitectureHattab Guesmi, Belgacem Bouallegue, Ridha Djemal, Rached TourkiIn this study we present the architecture for use in high-performance switching networks with support quality of service (QoS) guarantees. Quality of services guarantees in terms of delay, through-put and loss rate can be provided by using mechanism's support like scheduling and buffer management at switching architecture in packet switching networks. Our architecture is based on a new data structure … …Journal of Computer Science, Vol. 2, Issue 3 · 31 Mar 2006 · 6,811 accessesView PDFCite
Research ArticleOpen accessIn the abstractStudy of the Flow Structure of A Thermal Plume Evolving in an Unlimited and in A Semi-Enclosed EnvironmentJamil Zinoubi, A. Ould Mohamed Mahmoud, Taoufik Naffouti et al.The basic objective of this study was to better knowledge the fine flow structure of thermal plume created by a heated disk, evolving in an unlimited and in a semi-enclosed environment. The flow visualization and the study of the temperature fluctuations spectrum show clearly a considerable change of the turbulent structure of the internal flow in comparison with the free … …American Journal of Applied Sciences, Vol. 3, Issue 1 · 31 Jan 2006 · 7,030 accessesView PDFCite
Research ArticleOpen accessIn the abstractNeurocomputing Device for Image Processing and ClassificationRashad J. RasrasThis article is concerned with problems of construction of specialized computing device for image processing and classification. The device may be used for classification of objects images in conditions of various image scales of the same object. The device may be realized by neurochips technology. …Journal of Computer Science, Vol. 1, Issue 2 · 19 Oct 2005 · 4,836 accessesView PDFCite
Research ArticleOpen accessIn the abstractStudy of Cutoff Frequency of High Collector Current Density in SiGe Single-Heterojunction Bipolar TransistorG. M. Khanduri, B. S. PanwarThe cutoff frequency performance of an NPN Si/SiGe/SiGe Single-heterojunction bipolar transistor (SiGe SHBT) at high collector current densities has been analyzed using a 2-dimensional MEDICI device simulator. A conventional NPN Si/SiGe/Si Double-heterojunction bipolar transistor (SiGe DHBT) having uniform 14%Ge in the base region has been investigated for comparison. The analysis shows the formation of a retarding potential barrier for minority … …American Journal of Applied Sciences, Vol. 1, Issue 3 · 30 Sep 2004 · 6,891 accessesView PDFCite