Research ArticleOpen accessIn the abstractOn using Mobile IP ProtocolsFayza A. NadaThe recent advances in wireless communication technology and the unprecedented growth of the Internet have paved the way for wireless networking and IP mobility. Mobile Internet protocol has been designed within the IETF to support the mobility of users who wish to connect to the Internet and maintain communications as they move from place to place. This study describes and … …Journal of Computer Science, Vol. 2, Issue 2 · 28 Feb 2006 · 6,727 accessesView PDFCite
Research ArticleOpen accessIn the abstractHybrid Optimize Strategy based QoS Route Algorithm for Mobile Ad hoc NetworksFu Peng, Zhang DeyunIt is very difficult to find feasible QoS (Quality of service) routes in the mobile ad hoc networks (MANETs), because of the nature constrains of it, such as dynamic network topology, wireless communication link and limited process capability of nodes. In order to reduce average cost in flooding path discovery scheme of the traditional MANETs routing protocols and increase the … …Journal of Computer Science, Vol. 2, Issue 2 · 28 Feb 2006 · 6,546 accessesView PDFCite
Research ArticleOpen accessIn the abstractRedundancy Schemes for High Availability Computer ClustersChristian K. Bassek, Samuel Pierre, Alejandro QuinteroThe primary goal of computer clusters is to improve computing performances by taking advantage of the parallelism they intrinsically provide. Moreover, their use of redundant hardware components enables them to offer high availability services. In this paper, we present an analytical model for analyzing redundancy schemes and their impact on the cluster’s overall performance. Furthermore, several cluster redundancy techniques are … …Journal of Computer Science, Vol. 2, Issue 1 · 31 Jan 2006 · 7,229 accessesView PDFCite
Research ArticleOpen accessIn the abstractLocalization of Implanted Impurities in SiliconM. Jadan, Jihad S.M. AddasiLocalization of implanted boron impurities at the nodes and interstitial of silicon depending on the implantation current density has been studied by the X-ray diffraction and astrophysical methods. A shares of the impurity at the lattice sites increases with growing current density due to the instantaneous vacancy concentration and suppression of the impurity displacement from the sites by silicon interstitial. …American Journal of Applied Sciences, Vol. 2, Issue 4 · 30 Apr 2005 · 6,712 accessesView PDFCite