Research ArticleOpen accessAll words, across the recordDeep Defects Annihilation in GaAs1-xNx Layers by Si-dopingN. Ben Sedrine, A. Hamdouni, J. Rihani et al.The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which … …American Journal of Applied Sciences, Vol. 4, Issue 1 · 30 Apr 2007 · 8,160 accessesView PDFCite