THE STRUCTURE AND MECHANICAL PROPERTIES OF ALUMINA FILM PREPARED BY RF DIODE SPUTTERING
H. Panitchakan1 & P. Limsuwan2 Show affiliations
- Department of Physics, King Mongkut’s University of Technology Thonburi, Bangkok 10140, Thailand
- Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok 10400, Thailand
Physics International, Volume 4, Issue 1, pp. 73–80 · doi.org/10.3844/pisp.2013.73.80
Abstract
Alumina (Al2O3) films were prepared on Al2O3-TiC substrates by RF diode sputtering. The target sputtering power was varied from 4 to 8 kW. The effects of target sputtering power on the structure and mechanical properties of alumina films were investigated. The results show that the structure of the alumina films deposited at all the target sputtering powers is amorphous. However, under the exposure to the electron beam during the Transmission Electron Microscopy (TEM) measurements, the structure of alumina films becomes crystalline. The hardness and elastic modulus of alumina films were found to increase as the target sputtering power was increased.
Licence and reuse
Open access. This article is licensed under a Creative Commons Attribution 3.0 Licence (CC BY 3.0), as printed on the article, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original authors and the source. No permission is needed.
How to reuse this articleResponses (0)
About this article
Panitchakan, H. & Limsuwan, P. (2013). THE STRUCTURE AND MECHANICAL PROPERTIES OF ALUMINA FILM PREPARED BY RF DIODE SPUTTERING. Physics International, 4(1), 73–80. https://doi.org/10.3844/pisp.2013.73.80
- Licence
- CC BY 3.0
- Issue
- Volume 4, Issue 1
- Policies
- Editorial independenceUse of generative AIData availabilityAppeals and complaints
- Version
- Version of record