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American Journal of Applied Sciences

ISSN 1546-9239 (print)eISSN 1554-3641 (online) Open access
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Research Article · Open access · Published 1 August 2011

Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography

Arash Dehzangi, Farhad Larki, E.B. Saion et al.
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Citing articles (9)

Read from Crossref’s cited-by service every week, newest first.

  1. doi:10.1109/nano63165.2025.11113741Found 15 August 2025
  2. doi:10.1002/9781394248506.ch8Found 16 March 2025
  3. doi:10.1007/s12633-017-9606-1Found 12 June 2020
  4. doi:10.1109/rsm.2011.6088302Found 12 June 2020
  5. doi:10.4028/www.scientific.net/nh.3.93Found 12 June 2020
  6. doi:10.4028/www.scientific.net/nh.4.33Found 12 June 2020
  7. doi:10.1186/1556-276x-7-381Found 12 June 2020
  8. doi:10.1049/mnl.2012.0590Found 12 June 2020
  9. doi:10.3762/bjnano.3.91Found 12 June 2020